Ohmic contact formation between metal and AlGaN/GaN heterostructure via graphene insertion

Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure

(2012) Yuh-Renn Wu et al.   APPLIED PHYSICS LETTERS

Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High $f_{\max}$

(2012) Daniel J. Denninghoff et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

(2012) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Determination of Work Function of Graphene under a Metal Electrode and Its Role in Contact Resistance

(2012) Seung Min Song et al.   NANO LETTERS

A roadmap for graphene

(2012) K. S. Novoselov et al.   NATURE

High quality, transferrable graphene grown on single crystal Cu(111) thin films on basal-plane sapphire

(2011) Kongara M. Reddy et al.   APPLIED PHYSICS LETTERS

Graphene/GaN Schottky diodes: Stability at elevated temperatures

(2011) S. Tongay et al.   APPLIED PHYSICS LETTERS

Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With $f_{T}$ of 260 GHz

(2011) K. Shinohara et al.   IEEE ELECTRON DEVICE LETTERS

Metal−Graphene Interaction Studied via Atomic Resolution Scanning Transmission Electron Microscopy

(2011) Recep Zan et al.   NANO LETTERS

Metal-face InAlN/AlN/GaN high electron mobility transistors with regrown ohmic contacts by molecular beam epitaxy

(2011) Jia Guo et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes

(2010) Wantae Lim et al.   APPLIED PHYSICS LETTERS

Terahertz intersubband absorption in GaN/AlGaN step quantum wells

(2010) H. Machhadani et al.   APPLIED PHYSICS LETTERS

Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

(2010) Sansaptak Dasgupta et al.   APPLIED PHYSICS LETTERS

Modified, semiconducting graphene in contact with a metal: Characterization of the Schottky diode

(2010) Amirhasan Nourbakhsh et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN HEMT With 300-GHz $f_{\max}$

(2010) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Roll-to-roll production of 30-inch graphene films for transparent electrodes

(2010) Sukang Bae et al.   Nature Nanotechnology

Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

(2010) Yitao Liao et al.   Physica Status Solidi-Rapid Research Letters

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

(2009) X. Li et al.   SCIENCE