期刊
APPLIED PHYSICS LETTERS
卷 102, 期 15, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4801940
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资金
- National Science Foundation [ECS-0925529, DMR-0820414]
- ONR DATE MURI [ONR N00014-11-1-0721]
- Directorate For Engineering
- Div Of Electrical, Commun & Cyber Sys [0925529] Funding Source: National Science Foundation
A simple method for the creation of Ohmic contact to 2D electron gas in AlGaN/GaN high electron-mobility transistors using Cr/graphene layer is demonstrated. A weak temperature dependence of this Ohmic contact observed in the range 77 to 300K precludes thermionic emission or trap-assisted hopping as possible carrier-transport mechanisms. It is suggested that the Cr/graphene combination acts akin to a doped n-type semiconductor in contact with AlGaN/GaN heterostructure, and promotes carrier transport along percolating Al-lean paths through the AlGaN layer. This use of graphene offers a simple method for making Ohmic contacts to AlGaN/GaN heterostructures, circumventing complex additional processing steps involving high temperatures. These results could have important implications for the fabrication and manufacturing of AlGaN/GaN-based microelectronic and optoelectronic devices/sensors of the future. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4801940]
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