AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using Oxide Insulator Grown by Photoelectrochemical Oxidation Method

Published 2008 View Full Article

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Journal

IEEE ELECTRON DEVICE LETTERS

Volume 29, Issue 4, Pages 284-286

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2008-03-28

DOI

10.1109/led.2008.917326

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