Investigation of tow-step electrical degradation behavior in a-InGaZnO thin-film transistors with Sm2O3 gate dielectrics

Effect of channel widths on negative shift of threshold voltage, including stress-induced hump phenomenon in InGaZnO thin-film transistors under high-gate and drain bias stress

(2012) Sung-Hwan Choi et al.   APPLIED PHYSICS LETTERS

Origin of self-heating effect induced asymmetrical degradation behavior in InGaZnO thin-film transistors

(2012) Tien-Yu Hsieh et al.   APPLIED PHYSICS LETTERS

Hybrid solution processed InGaO3(ZnO)m thin films with periodic layered structures and thermoelectric properties

(2012) Jun Hyeon Kim et al.   JOURNAL OF MATERIALS CHEMISTRY

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

(2012) Yong-Hoon Kim et al.   NATURE

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

(2011) Bosul Kim et al.   APPLIED PHYSICS LETTERS

Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

(2011) Wan-Fang Chung et al.   APPLIED PHYSICS LETTERS

Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

(2011) Himchan Oh et al.   APPLIED PHYSICS LETTERS

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

(2011) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors

(2010) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Instability in threshold voltage and subthreshold behavior in Hf–In–Zn–O thin film transistors induced by bias-and light-stress

(2010) Khashayar Ghaffarzadeh et al.   APPLIED PHYSICS LETTERS

High-Performance a-IGZO TFT With $\hbox{ZrO}_{2}$ Gate Dielectric Fabricated at Room Temperature

(2010) Jae Sang Lee et al.   IEEE ELECTRON DEVICE LETTERS

Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a ‘sol–gel on chip’ process

(2010) K. K. Banger et al.   NATURE MATERIALS

Anomalously high thermal conductivity of amorphous Si deposited by hot-wire chemical vapor deposition

(2010) Ho-Soon Yang et al.   PHYSICAL REVIEW B

Impact of high-k TiOx dielectric on device performance of indium-gallium-zinc oxide transistors

(2009) Jin-Seong Park et al.   APPLIED PHYSICS LETTERS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Flexible full color organic light-emitting diode display on polyimide plastic substrate driven by amorphous indium gallium zinc oxide thin-film transistors

(2009) Jin-Seong Park et al.   APPLIED PHYSICS LETTERS

Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous InGaZnO4Thin-Film Transistors

(2009) Kazushige Takechi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The Bias Stress Effect on Poly-Silicon TFTs

(2009) Sung-Jin Park et al.   JOURNAL OF THE KOREAN PHYSICAL SOCIETY

Current Conduction Mechanisms in CeO[sub 2] Thin Films

(2008) Fu-Chien Chiu   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effect of Annealing on the Structural and Electrical Properties of High-k Sm[sub 2]O[sub 3] Dielectrics

(2008) Tung-Ming Pan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

(2008) Jang Yeon Kwon et al.   IEEE ELECTRON DEVICE LETTERS

Thermal Analysis of Degradation in Ga2O3–In2O3–ZnO Thin-Film Transistors

(2008) Mami Fujii et al.   JAPANESE JOURNAL OF APPLIED PHYSICS