Three-dimensional evaluation of gettering ability of Σ3{111} grain boundaries in silicon by atom probe tomography combined with transmission electron microscopy

Interaction between Metal Impurities and Small-Angle Grain Boundaries on Recombination Properties in Multicrystalline Silicon for Solar Cells

(2012) Takashi Sameshima et al.   Applied Physics Express

B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing

(2012) S. Jin et al.   JOURNAL OF APPLIED PHYSICS

Generation mechanism of dislocations and their clusters in multicrystalline silicon during two-dimensional growth

(2011) Kentaro Kutsukake et al.   JOURNAL OF APPLIED PHYSICS

Limits on Passivating Defects in Semiconductors: The Case of Si Edge Dislocations

(2011) Tzu-Liang Chan et al.   PHYSICAL REVIEW LETTERS

First-Principles Calculations on Σ3 Grain Boundary Transition Metal Impurities in Multicrystalline Silicon

(2010) Ambigapathy Suvitha et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Atomic-scale redistribution of dopants in polycrystalline silicon layers

(2010) S. Duguay et al.   JOURNAL OF APPLIED PHYSICS

Interaction of dopant atoms with stacking faults in silicon crystals

(2010) Y. Ohno et al.   JOURNAL OF APPLIED PHYSICS

Effect of Au contamination on the electrical characteristics of a “model” small-angle grain boundary in n-type direct silicon bonded wafer

(2010) X. Yu et al.   JOURNAL OF APPLIED PHYSICS

In-situ analysis of optoelectronic properties of twin boundaries in AlGaAs by polarized cathodoluminescence spectroscopy in a TEM

(2010) Y. Ohno   Microscopy

Quantitative Photoelastic Characterization of Residual Strains in Grains of Multicrystalline Silicon

(2010) Masayuki Fukuzawa et al.   JOURNAL OF ELECTRONIC MATERIALS

Advances in the reconstruction of atom probe tomography data

(2010) B. Gault et al.   ULTRAMICROSCOPY

Field evaporation behavior in [001] FePt thin films

(2010) K.L. Torres et al.   ULTRAMICROSCOPY

Structural characterization and iron detection at Σ3 grain boundaries in multicrystalline silicon

(2009) Bin Chen et al.   JOURNAL OF APPLIED PHYSICS

Three dimensional characterization of dopant distribution in polycrystalline silicon by laser-assisted atom probe

(2008) K. Inoue et al.   APPLIED PHYSICS LETTERS

Investigation of local electrical properties of coincidence-site-lattice boundaries in location-controlled silicon islands using scanning capacitance microscopy

(2008) Nobuyuki Matsuki et al.   APPLIED PHYSICS LETTERS