☆ 4.6 Article

Investigation of local electrical properties of coincidence-site-lattice boundaries in location-controlled silicon islands using scanning capacitance microscopy

APPLIED PHYSICS LETTERS (2008)

Journal

APPLIED PHYSICS LETTERS

Volume 93, Issue 6, Pages -

Publisher

AMER INST PHYSICS

DOI: 10.1063/1.2968663

Keywords

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Categories

Physics, Applied

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Abstract

We used scanning capacitance microscopy (SCM) to investigate the electrical activity of grain boundaries consisting of random and coincidence-site-lattice (CSL) boundaries in location-controlled silicon islands, which were fabricated using the mu-Czochralski process with an excimer laser. The SCM results suggest that the electrical activity of the {122}Sigma 9 CSL boundary is much smaller than that of a random boundary, and the {111}Sigma 3 CSL boundary is negligible. This is consistent with previous theoretical predictions and experimental results for thin-film transistors. (C) 2008 American Institute of Physics.

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