Journal
JOURNAL OF APPLIED PHYSICS
Volume 108, Issue 5, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.3471817
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Funding
- National Natural Science Foundation of China [60906002, 50832006]
- 973 Program [2007CB613403]
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We have investigated the electrical characteristics of a model small-angle grain boundary (GB) in n-type direct silicon bonded wafers with intentional Au contamination. It is found that the Au aggregated at the GB can cause new acceptorlike states, developing a potential barrier. The density of Au-related GB states is about 1-2 X 10(12) cm(-2) eV(-1) in the energy range of E-c-0.65-E-c-0.33 eV. With the energy level becoming deeper, the corresponding electron capture cross-section becomes larger, in the order of magnitude 10(-16)-10(-15) cm(2). It is believed that Au contamination has strong influence on the electrical properties of GB. These results are interesting for the GB engineering of n-type multicrystalline silicon solar cells for terrestrial application. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3471817]
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