Article
Chemistry, Multidisciplinary
Eamonn T. Hughes, Mario Dumont, Yingtao Hu, Di Liang, Raymond G. Beausoleil, John E. Bowers, Kunal Mukherjee
Summary: A process has been developed for regrowing thick III-As layers on a thin GaAs template on Si, with a focus on controlling threading dislocation formation. The use of compressively strained dislocation blocking layers leads to a significant reduction in threading dislocation densities by as much as 30x.
CRYSTAL GROWTH & DESIGN
(2022)
Article
Physics, Applied
Jianfei Shen, Xuelin Yang, Huayang Huang, Danshuo Liu, Zidong Cai, Zhenghao Chen, Cheng Ma, Fujun Xu, Liwen Sang, Xinqiang Wang, Weikun Ge, Bo Shen
Summary: The study examined the interaction between carbon impurities and threading dislocations in GaN grown on Si substrates, finding a linear relationship between carbon incorporation and dislocation density. Carbon-decorated dislocations were found to act as acceptor-like traps, leading to important scattering centers that cannot be ignored. By reducing the density of carbon-decorated dislocations, a record room-temperature electron mobility with high-quality n(-)-GaN on Si was achieved.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Applied
H. Tetzner, W. Seifert, O. Skibitzki, Y. Yamamoto, M. Lisker, M. M. Mirza, I. A. Fischer, D. J. Paul, Monica De Seta, G. Capellini
Summary: This study investigates the effective background charge density in intrinsic Si0.06Ge0.94/Ge plastically relaxed heterostructures deposited on Si(001). Results show p-type conductivity in the nominally intrinsic layer, with hole concentration in mid 10(15) cm(-3) range at temperatures between 50 and 200 K. Carrier freeze out below 50 K indicates carriers originate from ionization of shallow acceptor-like defect states above valence band. Additionally, one dominant hole trap located at mid-gap position is found.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Xuexia Zhang, Yanfang Lou, Tuochen Gong, Guangming Wang, Jing Yao, Qing Yong, Tonghua Peng, Jian Yang, Chunjun Liu
Summary: This study investigates the relationship between the failure of a silicon carbide Schottky barrier diode and the defects on its substrate and epitaxial layer. The results show that single threading screw dislocations in the substrate and small pits on the epitaxial layer are strongly correlated with breakdown points.
Article
Chemistry, Physical
Zetao Ding, Thien N. Truong, Hieu T. Nguyen, Di Yan, Xinyu Zhang, Jie Yang, Zhao Wang, Peiting Zheng, Yimao Wan, Daniel Macdonald, Josua Stuckelberger
Summary: In this study, p-type passivating contacts based on industrial poly-Si/thermal-SiOx/n-c-Si substrates were fabricated using a spin-on doping technique. The effects of drive-in temperature, drive-in dwell time, and intrinsic poly-Si thickness on boron-doped poly-Si passivating contacts were investigated. The results showed that the passivation quality improved with increasing thermal budget but decreased with excessive thermal annealing, while the thickness of the intrinsic poly-Si film had little impact on performance. After optimization, the poly-Si passivating contacts exhibited promising characteristics with an implied open-circuit voltage > 720 mV and a contact resistivity below 5 mΩ cm2.
ACS APPLIED ENERGY MATERIALS
(2021)
Article
Instruments & Instrumentation
Aleksandr Barannikov, Ivan Troyan, Irina Snigireva, Anatoly Snigirev
Summary: This paper presents the results of using laboratory x-ray systems to study the crystal structure of an anvill made from a single-crystal diamond. The study utilized high-resolution x-ray imaging to analyze crystal structure defects and recorded two-dimensional images with different resolutions. Various defects, such as growth striations and dislocations, were observed, and the possible applications of this laboratory-based method in high-pressure physics were discussed along with suggestions for future improvements to the setup.
REVIEW OF SCIENTIFIC INSTRUMENTS
(2022)
Article
Chemistry, Physical
Wenhao Geng, Qinqin Shao, Yazhe Wang, Ruzhong Zhu, Xuefeng Han, Xiaodong Pi, Deren Yang, Rong Wang
Summary: The generation and expansion of stacking faults (SFs) during the physical-vapor-transport (PVT) growth of n-type 4H-SiC single-crystal boules are investigated. SFs with the Si-C bilayer stacking sequence of (3,3) are found near the seed crystal of the n-type 4H-SiC. The facet region of the n-type 4H-SiC single-crystal boule is free of SFs (3,3), while most of the SFs (3,3) are constrained in the nonfaceted region. The shear stress exerted in the nonfacet region gives rise to the formation and expansion of SFs (3,3), whereas the high compressive stress in the interface of the facet and nonfacet regions impedes the expansion of SFs (3,3).
JOURNAL OF PHYSICAL CHEMISTRY C
(2023)
Article
Materials Science, Ceramics
Yu Ogura, Atsutomo Nakamura, Tatsuya Kameyama, Yasuyoshi Kurokawa, Eita Tochigi, Naoya Shibata, Tsukasa Torimoto, Sena Hoshino, Tatsuya Yokoi, Katsuyuki Matsunaga
Summary: Recent research discovered that inorganic semiconductor zinc sulfide (ZnS) can exhibit high plasticity even at room temperature when deformed in darkness. The plastic deformation at room temperature can generate high density of glide dislocations in the crystal without changing the point defect structure significantly, and these dislocations themselves can exhibit unique luminescence properties.
JOURNAL OF THE AMERICAN CERAMIC SOCIETY
(2023)
Article
Materials Science, Ceramics
Hiroto Oguri, Yan Li, Eita Tochigi, Xufei Fang, Kenichi Tanigaki, Yu Ogura, Katsuyuki Matsunaga, Atsutomo Nakamura
Summary: The external light environment has a pronounced influence on the dislocation-based plasticity in inorganic semiconductors. Light illumination affects the formation and slip of dislocations, and the impact varies with different wavelengths.
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
(2024)
Article
Materials Science, Multidisciplinary
Shalini Srivastava, Shalini Singh, Vineet Kumar Singh
Summary: This study developed a model based on simulation studies to correlate the defect density and the performance of n-CdS/p-Si heterojunction solar cells. It was found that interface traps are more dominant in deteriorating the device performance than deep traps and shallow traps. The best efficiency determined through simulation in this study for n-CdS/p-Si heterojunction solar cell is 18.72%.
Article
Energy & Fuels
Thien N. Truong, Tien T. Le, Di Yan, Sieu Pheng Phang, Mike Tebyetekerwa, Matthew Young, Mowafak Al-Jassim, Andres Cuevas, Daniel Macdonald, Josua Stuckelberger, Hieu T. Nguyen
Summary: This study investigates the effects of different mixtures of Ga and B glass solutions on p-type poly-Si/SiOx passivating contacts. Increasing the percentage of Ga in the solution leads to a decrease in open circuit voltage and an increase in contact resistivity. After a hydrogenation treatment, all samples show improved performance, with negative effects on surface passivation when co-doping Ga with B.
Article
Energy & Fuels
Raphael Glatthaar, Beatriz Cela Greven, Tobias Okker, Frank Huster, Giso Hahn, Barbara Terheiden
Summary: Screen printing of Ag paste is crucial for implementing polycrystalline-silicon/silicon oxide (poly-Si/SiOx) passivating contacts in industrial solar cells. Ag crystallites are predominantly formed within the poly-Si layer and stop at the thermal SiOx, thermal interface, causing a cuboidal shape. A multilayer approach with interlayer SiOx is presented to avoid direct contact with the underlying SiOx, thermal/crystalline-Si interface.
SOLAR ENERGY MATERIALS AND SOLAR CELLS
(2023)
Article
Chemistry, Physical
Mingqiang Li, Yidi Shen, Kun Luo, Qi An, Peng Gao, Penghao Xiao, Yu Zou
Summary: Dislocation motion is crucial for the hardening, processing, and application of various materials. Previous studies have observed dislocation motion in crystalline solids under mechanical loading. However, controlling dislocation motion solely using a non-mechanical field has been challenging.
Article
Materials Science, Multidisciplinary
Yan Li, Xufei Fang, Eita Tochigi, Yu Oshima, Sena Hoshino, Takazumi Tanaka, Hiroto Oguri, Shigenobu Ogata, Yuichi Ikuhara, Katsuyuki Matsunaga, Atsutomo Nakamura
Summary: This study investigates the effects of light illumination on dislocation-mediated plasticity in hexagonal wurtzite ZnO. It is found that light illumination suppresses dislocation behavior, leading to differences in activation volume and dislocation glide under different light conditions.
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
(2023)
Article
Materials Science, Multidisciplinary
Kieran P. Hiller, Aimo Winkelmann, Ben Hourahine, Bohdan Starosta, Aeshah Alasmari, Peng Feng, Tao Wang, Peter J. Parbrook, Vitaly Z. Zubialevich, Sylvia Hagedorn, Sebastian Walde, Markus Weyers, Pierre-Marie Coulon, Philip A. Shields, Jochen Bruckbauer, Carol Trager-Cowan
Summary: This study uses an electron backscatter diffraction (EBSD) detector to extract images of dislocations and surface steps in nitride thin films. Postprocessing techniques are presented to extract the images from measurements of backscattered electron intensities and intensity distributions. The combination of virtual diode (VD) imaging and center of mass (COM) imaging produces images with better signal-to-noise ratio.
MICROSCOPY AND MICROANALYSIS
(2023)
Article
Physics, Applied
D. West, S. B. Zhang
APPLIED PHYSICS LETTERS
(2018)
Article
Chemistry, Multidisciplinary
Yang Li, Tianmeng Wang, Han Wang, Zhipeng Li, Yanwen Chen, Damien West, Raman Sankar, Rajesh K. Ulaganathan, Fangcheng Chou, Christian Wetzel, Cheng-Yan Xu, Shengbai Zhang, Su-Fei Shi
Article
Chemistry, Physical
Dan Wang, Dong Han, Damien West, Nian-Ke Chen, Sheng-Yi Xie, Wei Quan Tian, Vincent Meunier, Shengbai Zhang, Xian-Bin Li
NPJ COMPUTATIONAL MATERIALS
(2019)
Article
Chemistry, Multidisciplinary
Junzhang Ma, Han Wang, Simin Nie, Changjiang Yi, Yuanfeng Xu, Hang Li, Jasmin Jandke, Wulf Wulfhekel, Yaobo Huang, Damien West, Pierre Richard, Alla Chikina, Vladimir N. Strocov, Joel Mesot, Hongming Weng, Shengbai Zhang, Youguo Shi, Tian Qian, Ming Shi, Hong Ding
ADVANCED MATERIALS
(2020)
Article
Chemistry, Physical
Kai Cheng, Han Wang, Junhyeok Bang, Damien West, Jijun Zhao, Shengbai Zhang
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2020)
Article
Nanoscience & Nanotechnology
Debjit Ghoshal, Hanzhi Shang, Xin Sun, Xixing Wen, Dongxue Chen, Tianmeng Wang, Zonghuan Lu, Tushar Gupta, Harry Efstathiadis, Damien West, Nikhil Koratkar, Toh-Ming Lu, Shengbai Zhang, Su-Fei Shi
Summary: Through the use of mica as a model substrate, the growth mechanism of large-area epitaxial PbI2 thin films was revealed, uncovering the presence of inversion domain boundaries supporting the growth of epitaxial films. By combining experimental results with first-principles calculations, a deeper understanding of the thermodynamic and kinetic factors governing the growth mechanism was achieved, laying the foundation for the synthesis of high-quality large-area PbI2 thin films on other substrates.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Physical
Nannan Han, Weiyu Xie, Junfeng Zhang, Lizhao Liu, Jijun Zhao, Damien West, Shengbai Zhang
Summary: Two-dimensional monolayer-bilayer lateral junctions have clean interfaces and lack reconstruction at the edges of the half layer in the presence of unintentional dopants, allowing for dopants to passivate edge states remotely due to reduced dimensionality electrostatics.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Chemistry, Physical
Matthew Ciesler, Damien West, Shengbai Zhang
Summary: Molecular linkers like cysteine are used to stabilize colloidal quantum dots and facilitate charge transfer. Through first-principles calculations, researchers found that deprotonated ligands interact with both sides of a three-way heterostructure, leading to successful self-passivation and the formation of a charge-transfer state.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Chemistry, Physical
Rafael Besse, Han Wang, Damien West, Juarez L. F. De Silva, Shengbai Zhang
Summary: Understanding the dynamics of charge transfer at vertical heterostructures of transition metal dichalcogenide monolayers is crucial for future technological applications. In this study, a different mechanism from type-II is found in the MoS2/PtSe2 van der Waals heterobilayer, where the phonon bottleneck effectively separates photoelectrons from photoholes, providing a new direction for effective charge separation at interfaces.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Article
Chemistry, Physical
Zhirui Ma, Ke Yang, Xu Lian, Shuo Sun, Chengding Gu, Jia Lin Zhang, Damien West, Shengbai Zhang, Lei Liu, Kaidi Yuan, Yi-Yang Sun, Hexing Li, Wei Chen
JOURNAL OF PHYSICAL CHEMISTRY C
(2020)
Correction
Multidisciplinary Sciences
Michael L. Agiorgousis, Yi-Yang Sun, Duk-Hyun Choe, Damien West, Shengbai Zhang
ADVANCED THEORY AND SIMULATIONS
(2020)
Article
Chemistry, Multidisciplinary
Na Wang, Damien West, Wenhui Duan, S. B. Zhang
NANOSCALE ADVANCES
(2019)
Article
Multidisciplinary Sciences
Michael L. Agiorgousis, Yi-Yang Sun, Duk-Hyun Choe, Damien West, Shengbai Zhang
ADVANCED THEORY AND SIMULATIONS
(2019)
Article
Chemistry, Physical
Michael L. Agiorgousis, Yi-Yang Sun, Damien West, Shengbai Zhang
ACS APPLIED ENERGY MATERIALS
(2018)
Article
Materials Science, Multidisciplinary
Wenhan Zhang, Damien West, Seng Huat Lee, Yunsheng Qiu, Cui-Zu Chang, Jagadeesh S. Moodera, Yew San Hor, Shengbai Zhang, Weida Wu