Growth kinetics in position-controlled and catalyst-free InAs nanowire arrays on Si(111) grown by selective area molecular beam epitaxy

Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy

(2010) G Koblmüller et al.   NANOTECHNOLOGY

Gallium arsenide p-i-n radial structures for photovoltaic applications

(2009) C. Colombo et al.   APPLIED PHYSICS LETTERS

Surface Diffusion and Substrate−Nanowire Adatom Exchange in InAs Nanowire Growth

(2009) Shadi A. Dayeh et al.   NANO LETTERS

Direct Heteroepitaxy of Vertical InAs Nanowires on Si Substrates for Broad Band Photovoltaics and Photodetection

(2009) Wei Wei et al.   NANO LETTERS

Growth mechanisms and optical properties of GaAs-based semiconductor microstructures by selective area epitaxy

(2008) Martin Heiß et al.   JOURNAL OF CRYSTAL GROWTH

Control of InAs Nanowire Growth Directions on Si

(2008) Katsuhiro Tomioka et al.   NANO LETTERS

Growth characteristics of GaAs nanowires obtained by selective area metal–organic vapour-phase epitaxy

(2008) Keitaro Ikejiri et al.   NANOTECHNOLOGY

Silicon nanowires as efficient thermoelectric materials

(2008) Akram I. Boukai et al.   NATURE

Ga-assisted catalyst-free growth mechanism of GaAs nanowires by molecular beam epitaxy

(2008) C. Colombo et al.   PHYSICAL REVIEW B

Prismatic Quantum Heterostructures Synthesized on Molecular‐Beam Epitaxy GaAs Nanowires

(2008) Anna Fontcuberta i Morral et al.   Small