High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer

Published 2009 View Full Article

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Title
High performance In0.7Ga0.3As metal-oxide-semiconductor transistors with mobility >4400 cm2/V s using InP barrier layer
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 94, Issue 19, Pages 193502
Publisher
AIP Publishing
Online
2009-05-13
DOI
10.1063/1.3133360
References
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