Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate
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Title
Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate
Authors
Keywords
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Journal
Applied Physics Express
Volume 6, Issue 2, Pages 022101
Publisher
Japan Society of Applied Physics
Online
2013-01-24
DOI
10.7567/apex.6.022101
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