GaN-Based LEDs With Omnidirectional Metal Underneath an Insulating ${\rm SiO}_{2}$ Layer

Enhancement of Light Output Power of GaN-Based Light-Emitting Diodes by a Reflective Current Blocking Layer

(2011) C. C. Kao et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Nitride-Based LEDs With High-Reflectance and Wide-Angle Ag Mirror${+}$SiO$_{2}$/TiO$_{2}$ DBR Backside Reflector

(2011) Nan-Ming Lin et al.   JOURNAL OF LIGHTWAVE TECHNOLOGY

Improving Light Output Power of the GaN-Based Vertical-Injection Light-Emitting Diodes by Mg$^{+}$ Implanted Current Blocking Layer

(2009) Min-An Tsai et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Improvement in the Light Output Power of GaN-Based Light-Emitting Diodes by Natural-Cluster Silicon Dioxide Nanoparticles as the Current-Blocking Layer

(2009) Chun-Fu Tsai et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Nitride-Based LEDs With a Hybrid Al Mirror $+ {\hbox {TiO}} _{2} /{\hbox {SiO}}_{2}$ DBR Backside Reflector

(2009) S. J. Chang et al.   JOURNAL OF LIGHTWAVE TECHNOLOGY

Enhancement in output power of blue gallium nitride-based light-emitting diodes with omnidirectional metal reflector under electrode pads

(2008) J. K. Sheu et al.   APPLIED PHYSICS LETTERS