4.5 Article

Enhanced Emission Efficiency of GaN-Based Flip-Chip Light-Emitting Diodes by Surface Plasmons in Silver Disks

Journal

APPLIED PHYSICS EXPRESS
Volume 5, Issue 12, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1143/APEX.5.122103

Keywords

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Funding

  1. World-Class University Program
  2. Ministry of Education, Science, and Technology (MEST) through the National Research Foundation of Korea [R31-10026]
  3. Korea Science and Engineering Foundation (KOSEF) NCRC grant
  4. MEST [R15-2008-006-02001-0]
  5. National Research Foundation of Korea [2008-0062150] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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We demonstrate the surface plasmon (SP)-enhanced flip-chip blue light-emitting diodes (LEDs) having silver (Ag) disks in the p-GaN layer. The optical output power of an SP-enhanced flip-chip LED with Ag disks is increased by 45% at 20mA without showing any degradation of electrical characteristics, compared with that of a conventional flip-chip LED. The increase in optical output power is attributed to the improved internal quantum efficiency of LEDs because of the increase in the spontaneous emission rate by the resonance coupling between the excitons in multiple quantum wells and the SPs in the Ag disks. (C) 2012 The Japan Society of Applied Physics

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