Enhanced Performance of GaN-Based Light-Emitting Diodes by Using Al Mirror and Atomic Layer Deposition-TiO2/Al2O3Distributed Bragg Reflector Backside Reflector with Patterned Sapphire Substrate

Enhanced Emission Efficiency of GaN-Based Flip-Chip Light-Emitting Diodes by Surface Plasmons in Silver Disks

(2012) Chu-Young Cho et al.   Applied Physics Express

GaN-Based LEDs With Omnidirectional Metal Underneath an Insulating ${\rm SiO}_{2}$ Layer

(2012) Nan-Ming Lin et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Band alignment and interfacial properties of atomic layer deposited (TiO2) x (Al2O3)1−x gate dielectrics on Ge

(2011) Xue-Fei Li et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

(2011) Myunghee Kim et al.   Applied Physics Express

Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire

(2011) T. Detchprohm et al.   APPLIED PHYSICS LETTERS

High-efficiency vertical AlGaInP light-emitting diodes with conductive omni-directional reflectors

(2011) Jae Won Seo et al.   CURRENT APPLIED PHYSICS

Effect of Surface Texture and Backside Patterned Reflector on the AlGaInP Light-Emitting Diode: High Extraction of Waveguided Light

(2011) Ya-Ju Lee et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Enhanced Light Output of Vertical-Structured GaN-Based Light-Emitting Diodes with TiO2/SiO2Reflector and Roughened GaOxSurface Film

(2011) Wei-Chi Lee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Enhancement of light extraction from light emitting diodes

(2010) A.I. Zhmakin   PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS

Comparison of InGaN-Based LEDs Grown on Conventional Sapphire and Cone-Shape-Patterned Sapphire Substrate

(2009) Jae-Ho Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nitride-Based LEDs With a Hybrid Al Mirror $+ {\hbox {TiO}} _{2} /{\hbox {SiO}}_{2}$ DBR Backside Reflector

(2009) S. J. Chang et al.   JOURNAL OF LIGHTWAVE TECHNOLOGY

Quartz Crystal Microbalance Studies of Al2O3Atomic Layer Deposition Using Trimethylaluminum and Water at 125 °C†

(2009) R. A. Wind et al.   JOURNAL OF PHYSICAL CHEMISTRY A

Effects of p-Electrode Reflectivity on Extraction Efficiency of Nitride-Based Light-Emitting Diodes

(2008) Jaehee Cho et al.   Applied Physics Express

GaInN light-emitting diodes with omni-directional reflector using nanoporous SnO2 film

(2008) 沈常宇 Changyu Shen et al.   Chinese Optics Letters

Enhanced Output Power of GaN-Based LEDs With Nano-Patterned Sapphire Substrates

(2008) J. J. Chen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Study of GaN-Based Light-Emitting Diodes Grown on Chemical Wet-Etching-Patterned Sapphire Substrate With V-Shaped Pits Roughening Surfaces

(2008) Ya-Ju Lee et al.   JOURNAL OF LIGHTWAVE TECHNOLOGY

Investigation of InGaN/GaN power chip light emitting diodes with TiO2/SiO2omnidirectional reflector

(2008) H W Huang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY