Quantum Efficiency Enhancement of 530 nm InGaN Green Light-Emitting Diodes with Shallow Quantum Well

Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence

(2012) Dong-Soo Shin et al.   APPLIED PHYSICS LETTERS

Investigation of InGaN green light-emitting diodes with chirped multiple quantum well structures

(2012) Yi-An Chang et al.   OPTICS LETTERS

Green Gap Spectral Range Light-Emitting Diodes with Self-Assembled InGaN Quantum Dots Formed by Enhanced Phase Separation

(2011) Il-Kyu Park et al.   Applied Physics Express

Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Understanding efficiency droop effect in InGaN/GaN multiple-quantum-well blue light-emitting diodes with different degree of carrier localization

(2010) Jiaxing Wang et al.   APPLIED PHYSICS LETTERS

Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

(2010) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes

(2009) Lei Wang et al.   APPLIED PHYSICS LETTERS

High-efficiency staggered 530 nm InGaN/InGaN/GaN quantum-well light-emitting diodes

(2009) Seoung-Hwan Park et al.   APPLIED PHYSICS LETTERS

Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile

(2009) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

(2009) Yen-Kuang Kuo et al.   APPLIED PHYSICS LETTERS

Study of the Excitation Power Dependent Internal Quantum Efficiency in InGaN/GaN LEDs Grown on Patterned Sapphire Substrate

(2009) Ya-Ju Lee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

(2009) Jae-Hyun Ryou et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Type-II InGaN-GaNAs quantum wells for lasers applications

(2008) Ronald A. Arif et al.   APPLIED PHYSICS LETTERS