Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition
Authors
Keywords
Atomic Layer Deposition, Resistive Switching, High Resistance State, Oxygen Plasma Treatment, Hydrogen Impurity
Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 116, Issue 2, Pages 663-669
Publisher
Springer Nature
Online
2014-02-24
DOI
10.1007/s00339-014-8324-4
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition
- (2013) Jian Zhang et al. APPLIED PHYSICS LETTERS
- Structural, optical, electrical and resistive switching properties of ZnO thin films deposited by thermal and plasma-enhanced atomic layer deposition
- (2013) Jian Zhang et al. APPLIED SURFACE SCIENCE
- A selective ethanol gas sensor based on spray-derived Ag–ZnO thin films
- (2013) N. L. Tarwal et al. JOURNAL OF MATERIALS SCIENCE
- Highly Tunable Electrical Properties in Undoped ZnO Grown by Plasma Enhanced Thermal-Atomic Layer Deposition
- (2012) M. A. Thomas et al. ACS Applied Materials & Interfaces
- Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO
- (2012) Guang Chen et al. ADVANCED MATERIALS
- Bipolar resistive switching with self-rectifying effects in Al/ZnO/Si structure
- (2012) C. Chen et al. JOURNAL OF APPLIED PHYSICS
- High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device
- (2012) Wen-Yuan Chang et al. JOURNAL OF THE ELECTROCHEMICAL SOCIETY
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices
- (2012) Feng Zhang et al. SOLID STATE COMMUNICATIONS
- Reversible band gap tuning of metal oxide films using hydrogen and oxygen plasmas
- (2012) Jr-Wei Peng et al. THIN SOLID FILMS
- Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
- (2011) Ting Chang et al. ACS Nano
- High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3
- (2011) Zhibo Yan et al. ADVANCED MATERIALS
- Plasma-Assisted Atomic Layer Deposition: Basics, Opportunities, and Challenges
- (2011) H. B. Profijt et al. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- The properties of plasma-enhanced atomic layer deposition (ALD) ZnO thin films and comparison with thermal ALD
- (2010) Doyoung Kim et al. APPLIED SURFACE SCIENCE
- Fabrication of sandwich-structured ZnO/reduced graphite oxide composite and its photocatalytic properties
- (2009) Xiaogang Chen et al. JOURNAL OF MATERIALS SCIENCE
- Unipolar resistive switching characteristics of ZnO thin films for nonvolatile memory applications
- (2008) Wen-Yuan Chang et al. APPLIED PHYSICS LETTERS
- Surface chemistry of plasma-assisted atomic layer deposition of Al2O3 studied by infrared spectroscopy
- (2008) E. Langereis et al. APPLIED PHYSICS LETTERS
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
Find Funding. Review Successful Grants.
Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.
ExplorePublish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn More