Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

Title
Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices
Authors
Keywords
-
Journal
SOLID STATE COMMUNICATIONS
Volume 152, Issue 17, Pages 1630-1634
Publisher
Elsevier BV
Online
2012-05-04
DOI
10.1016/j.ssc.2012.04.073

Ask authors/readers for more resources

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started