Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting

Title
Sulfur-doped black silicon formed by metal-assist chemical etching and ion implanting
Authors
Keywords
SiNW Array, Black Silicon, Entire Wavelength Range, Etching Duration, Sulfur Dopant
Journal
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
Volume 114, Issue 3, Pages 765-768
Publisher
Springer Nature
Online
2013-04-05
DOI
10.1007/s00339-013-7682-7

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