Lifetime laser damage performance of β-Ga2O3 for high power applications

Thermally ruggedized ITO transparent electrode films for high power optoelectronics

(2017) Jae-Hyuck Yoo et al.   OPTICS EXPRESS

Optical and electrical properties of indium tin oxide films near their laser damage threshold

(2017) Jae-Hyuck Yoo et al.   Optical Materials Express

Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition

(2016) Subrina Rafique et al.   APPLIED PHYSICS LETTERS

Spectroscopic ellipsometry studies on β-Ga2O3films and single crystal

(2016) Takeyoshi Onuma et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Laser damage mechanisms in conductive widegap semiconductor films

(2016) Jae-Hyuck Yoo et al.   OPTICS EXPRESS

Recent progress in Ga2O3power devices

(2016) Masataka Higashiwaki et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Optical damage performance of conductive widegap semiconductors: spatial, temporal, and lifetime modeling

(2016) Selim Elhadj et al.   Optical Materials Express

Raman tensor elements of β-Ga2O3

(2016) Christian Kranert et al.   Scientific Reports

Photonic materials, structures and devices for Reststrahlen optics

(2015) K. Feng et al.   OPTICS EXPRESS

Synthesis of wide bandgap Ga2O3(Eg ∼ 4.6-4.7 eV) thin films on sapphire by low pressure chemical vapor deposition

(2015) Subrina Rafique et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Polarized Raman spectra in β-Ga2O3 single crystals

(2014) T. Onuma et al.   JOURNAL OF CRYSTAL GROWTH

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

(2014) M. A. Reshchikov et al.   PHYSICAL REVIEW B

Mechanisms of growth and defect properties of epitaxial SiC

(2014) F. La Via et al.   Applied Physics Reviews

Prospects of III-nitride optoelectronics grown on Si

(2013) D Zhu et al.   REPORTS ON PROGRESS IN PHYSICS

Crystal orientation of β-Ga2O3 thin films formed on c-plane and a-plane sapphire substrate

(2012) Shinji Nakagomi et al.   JOURNAL OF CRYSTAL GROWTH

Free-electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong phonon–plasmon coupling regime

(2012) G Shkerdin et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

(2012) J. B. Varley et al.   PHYSICAL REVIEW B

Carbon impurities and the yellow luminescence in GaN

(2010) J. L. Lyons et al.   APPLIED PHYSICS LETTERS