Journal
OPTICS EXPRESS
Volume 24, Issue 16, Pages 17616-17634Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.24.017616
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Funding
- U.S. Department of Energy (DOE) [DE-AC52-07NA27344]
- Lawrence Livermore National Laboratory (LLNL)
- Laboratory Directed Research and Development grant [15-ERD-057]
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Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si: GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers. (C) 2016 Optical Society of America
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