Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes
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Title
Comparative Study of Highly Reflective ITO/DBR and Ni/Ag ohmic Contacts for GaN-Based Flip-Chip Light-Emitting Diodes
Authors
Keywords
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Journal
ECS Journal of Solid State Science and Technology
Volume 7, Issue 6, Pages Q116-Q122
Publisher
The Electrochemical Society
Online
2018-06-12
DOI
10.1149/2.0191806jss
References
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Related references
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- Design of ITO/SiO2/TiO2 distributed Bragg reflectors as a p-type electrode in GaN-based flip-chip light emitting diodes
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- Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern
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