The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes

Published 2017 View Full Article

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Title
The role of ITO resistivity on current spreading and leakage in InGaN/GaN light emitting diodes
Authors
Keywords
InGaN/GaN multiple quantum well, LED, Indium Tin Oxide, Current spreading
Journal
SUPERLATTICES AND MICROSTRUCTURES
Volume 111, Issue -, Pages 1177-1194
Publisher
Elsevier BV
Online
2017-08-09
DOI
10.1016/j.spmi.2017.08.026

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