Article
Engineering, Electrical & Electronic
You-Sheng Liu, Pin Su
Summary: This article investigates how the dimensional scaling of ferroelectric field-effect transistor (FeFET) nonvolatile memory (NVM) is impacted by variations in interface trapped-charge, particularly under scenarios of uniform and random ferroelectric-dielectric (FE-DE) phase distribution. The study found that higher trap density leads to decreased memory window (MW) and read margin, with FeFET devices with scaled channel width being more vulnerable to trapped-charge variations. Additionally, in the presence of FE-DE phase variation, trapped charges mainly affect MW degradation for high MW instances as trap density increases, significantly worsening the worst case MW. Consideration of increased sigma MW due to random interface trapped charges is also necessary when scaling down the interfacial layer thickness of FeFET devices to increase MW. This study provides insights for advanced FeFET NVM device design.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Chun-Kuei Chen, Sonu Hooda, Zihang Fang, Manohar Lal, Zefeng Xu, Jieming Pan, Shih-Hao Tsai, Evgeny Zamburg, Aaron Voon-Yew Thean
Summary: In this article, a low-thermal budget defect-engineered process is used to achieve top-gated oxide-semiconductor FeFETs. By engineering the InGaZnOx and InSnOx heterojunction channel, the FeFETs exhibit a highly stabilized ferroelectric memory window and a high current ON/OFF ratio. This technique provides a reliable solution for realizing performant FeFETs with back-end-of-line thermal constraints.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Physical
Chen Liu, Binjian Zeng, Siwei Dai, Shuaizhi Zheng, Qiangxiang Peng, Jinjuan Xiang, Jianfeng Gao, Jie Zhao, Jincheng Zhang, Min Liao, Yichun Zhou
Summary: This study investigates the stability of multiple memory states in Hf0.5Zr0.5O2-based multilevel ferroelectric field-effect transistors (FeFETs). The results show that the multiple memory states do not exhibit significant degradation during write and read disturb cycles. Additionally, the intermediate memory states with unsaturated ferroelectric polarizations demonstrate better retention characteristics compared to the memory state with saturated ferroelectric polarization.
JOURNAL OF MATERIOMICS
(2022)
Article
Computer Science, Hardware & Architecture
Sandeep Thirumala, Arnab Raha, Sumeet Gupta, Vijay Raghunathan
Summary: This article explores the design of energy-efficient intermittently powered systems using reconfigurable-ferroelectric transistors. Various nonvolatile flip-flops and memory designs based on R-FEFETs are proposed, with simulations showing significant energy savings at the system level. Specifically, improvements in nonvolatile memory result in larger energy savings compared to register improvements in microcontroller cores.
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
(2022)
Article
Engineering, Electrical & Electronic
Gihun Choe, Shimeng Yu
Summary: An advanced gate-stack design of ferroelectric transistors has been proposed to achieve logic compatible program/erase voltage, better scalability, and suppressed depolarization field. By adjusting the area ratio between the ferroelectric capacitor and the MOS capacitor using a floating gate, the electric field on the FE layer can be enhanced. The proposed FeM-Nanosheet could lower the operating voltage and depolarization field by increasing the number of nanosheets to reduce the area ratio.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Engineering, Electrical & Electronic
Wei-Xiang You, Bo-Kai Huang, Pin Su
Summary: This brief presents an alternative approach for reconfigurable logic-in-memory based on the unique ferroelectric minor-loop behavior of FeFET. Simulation shows that NAND/NOR reconfigurability can theoretically be achieved. This approach may be useful when body-effect capability is lacking for nonplanar or 3-D stacked FeFETs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Physical
Kyung-Tae Kim, Keon Woo Lee, Sanghee Moon, Joon Bee Park, Chan-Yong Park, Seung-Ji Nam, Jaehyun Kim, Myoung-Jae Lee, Jae Sang Heo, Sung Kyu Park
Summary: Research on the surface and interfacial electro-chemical behaviors of s-SWCNTs has led to the development of a cost-effective purification process, HAP, which minimizes polymers bound to s-SWCNT surfaces to improve charge carrier transport. By introducing conformal dielectric configuration for s-SWCNT FETs and optimizing gate-field-induced surface and interfacial behaviors, highly capacitive s-SWCNT FETs with ion-gel dielectrics were achieved, exhibiting a field-effect mobility of approximately 8.19 cm(2)/V.s and on/off current ratio of approximately 10(5) with negligible hysteresis.
Article
Engineering, Electrical & Electronic
Guodong Yin, Yi Cai, Juejian Wu, Zhengyang Duan, Zhenhua Zhu, Yongpan Liu, Yu Wang, Huazhong Yang, Xueqing Li
Summary: Compute-in-memory (CiM) is a promising approach for domain-specific applications, with the charge-domain CiM showing higher energy efficiency and resistance to device variations compared to current-domain solutions. This brief introduces a concept and analysis of charge-domain CiM using nonvolatile memory devices, which can greatly reduce leakage power and offer higher density. Simulations on binary neural network applications demonstrate significant energy consumption reduction compared to existing solutions, with FeFET-based CD-CiM achieving high accuracy in MNIST and CIFAR-10 data sets.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2021)
Article
Physics, Applied
Yi-Jan Lin, Chih-Yu Teng, Chenming Hu, Chun-Jung Su, Yuan-Chieh Tseng
Summary: This paper proposes an approach to enhance Hf0.5Zr0.5O2 (HZO) ferroelectric orthorhombic phase formation through in situ NH3 plasma treatment. The treatment suppresses interfacial diffusion between HZO and the top TiN electrode, reducing oxygen vacancies within HZO. The results demonstrate improved reliability and ferroelectric performance of HZO devices with stable transfer characteristics and memory windows after NH3 treatment.
APPLIED PHYSICS LETTERS
(2021)
Article
Physics, Multidisciplinary
Xiaoqing Sun, Hao Xu, Junshuai Chai, Xiaolei Wang, Wenwu Wang
Summary: We investigated the charge trapping phenomenon in n-type ferroelectric field-effect transistors (FeFETs) with metal/ferroelectric/interlayer/Si (MFIS) gate stack structure. A model was established to simulate the electron trapping behavior in n-type Si FeFET based on quantum mechanical electron tunneling theory. The threshold voltage shift of FeFET was measured using the pulsed I-d-V-g method, and the model fitted the experimental data well. Our study revealed that electrons in the Si substrate were mainly trapped at the interface between the ferroelectric layer and interlayer by inelastic trap-assisted tunneling during the positive operation pulse.
Article
Engineering, Electrical & Electronic
Yooyeon Jo, Ji Young Lee, Eunpyo Park, Hyun-Soo Kim, Hyung-Jin Choi, Seunguk Mun, Yunseok Kim, Sunghoon Hur, Jung Ho Yoon, Ji-Soo Jang, Chong-Yun Kang, Seung Hyub Baek, Jeong Min Baik, Joon Young Kwak, Hyun-Cheol Song
Summary: Neuromorphic computing systems, composed of neurons and synapses, have gained attention for their efficient processing of large data sets. Ferroelectric field-effect transistors (FeFETs) with controllable channel current have potential to act as artificial synaptic devices. In this study, a Pb(Zr0.20Ti0.80)O-3 (PZT) film was grown on an La(0.67)Sr(0.33)MnO(3) (LSMO) buffered SrTiO(3) (STO) substrate, and an amorphous indium gallium zinc oxide (a-IGZO) was used as the channel layer. The fabricated FeFETs based on PZT and a-IGZO were able to emulate synaptic plasticity with different pulse conditions.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Chengji Jin, Jiacheng Xu, Jiani Gu, Jiayi Zhao, Xiaole Jia, Jiajia Chen, Huan Liu, Miaomiao Zhang, Yue Peng, Bing Chen, Ran Cheng, Yan Liu, Xiao Yu, Genquan Han
Summary: We experimentally investigated the disturb-free operations of multilevel cell (MLC) ferroelectric field-effect transistors (FeFETs) in a NAND array. We characterized the fabricated FeFET cells and investigated optimized schemes for stable writing of FeFET cells into multiple states. We proposed write and read schemes to achieve stable MLC operations of FeFET NAND arrays. This work provides a fundamental understanding of disturb-free MLC FeFET operations for NAND applications.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Computer Science, Hardware & Architecture
Qingrong Huang, Dayane Reis, Chao Li, Di Gao, Michael Niemier, Xiaobo Sharon Hu, Mohsen Imani, Xunzhao Yin, Cheng Zhuo
Summary: The article presents computing-in-memory designs using ferroelectric field-effect transistors, which can achieve both compactness and efficiency in multiple learning tasks.
IEEE DESIGN & TEST
(2022)
Article
Engineering, Electrical & Electronic
Mor M. Dahan, Evelyn T. Breyer, Stefan Slesazeck, Thomas Mikolajick, Shahar Kvatinsky
Summary: This paper proposes a memory architecture called crossed-AND (C-AND) for FeFET memory, which addresses the asymmetric switching voltage issue and enables fast read and write operations for entire words. It also reduces read errors and write disturbs.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS
(2022)
Article
Engineering, Electrical & Electronic
You-Sheng Liu, Pin Su
Summary: This study investigates scaled 2-D MoS2 ferroelectric field-effect transistor (FeFET) nonvolatile memories (NVMs) using TCAD atomistic simulations. The results show that MoS2 channel provides larger memory window, better immunity to trapped-charge-induced variability, and superior read margin compared to Si channel FeFETs. This study offers insights for the future scaling of FeFET NVMs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Physical
Q. J. Wang, Q. H. Tan, Y. K. Liu
JOURNAL OF ALLOYS AND COMPOUNDS
(2015)
Article
Materials Science, Multidisciplinary
Q. H. Tan, Q. J. Wang, Y. K. Liu, J. S. Shi, S. Q. Jiang, H. L. Yan
MATERIALS & DESIGN
(2016)
Article
Engineering, Environmental
Yuefa Jia, Changjin Wu, Deok-Hyeon Kim, B. W. Lee, S. J. Rhee, Yun Chang Park, Chul Sung Kim, Q. J. Wang, Chunli Liu
CHEMICAL ENGINEERING JOURNAL
(2018)
Article
Physics, Condensed Matter
Qiuhong Tan, Qianjin Wang, Yingkai Liu, Chunsheng Liu, Xiaobo Feng, Dapeng Yu
JOURNAL OF PHYSICS-CONDENSED MATTER
(2018)
Article
Nanoscience & Nanotechnology
Qiuhong Tan, Qianjin Wang, Yingkai Liu, Hailong Yan, Wude Cai, Zhikun Yang
NANOSCALE RESEARCH LETTERS
(2018)
Article
Physics, Applied
Q. J. Wang, J. B. Wang, X. L. Zhong, Q. H. Tan, Z. Hu, Y. C. Zhou
APPLIED PHYSICS LETTERS
(2012)
Article
Chemistry, Physical
Q. J. Wang, J. B. Wang, X. L. Zhong, Q. H. Tan, Y. C. Zhou
JOURNAL OF PHYSICAL CHEMISTRY C
(2011)
Article
Physics, Condensed Matter
Qianjin Wang, Qiuhong Tan, Yingkai Liu, Chen Qing, Xiaobo Feng, Dapeng Yu
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
(2019)
Article
Optics
Li Ren, Kunpeng Gao, Qiuhong Tan, Chen Qing, Qianjin Wang, Peizhi Yang, Yingkai Liu
Summary: The study demonstrated the preparation of large-scale CsPbBr3 microwire arrays using a template-assisted method, showing excellent optoelectronic performance and stability, providing a possibility for producing high-performance optoelectronic devices.
Article
Physics, Applied
Aimin Liu, Jiyu Zhao, Qiuhong Tan, Peizhi Yang, Yingkai Liu, Qianjin Wang
Summary: A composite photodetector device consisting of monolayer MoS2 nanosheets and CdS0.42Se0.58 nanobelts has been successfully prepared, showing wide spectral response range and high responsivity, providing a new approach for the preparation of hybrid photodetectors with wide spectral response and high responsivity.
JOURNAL OF ADVANCED DIELECTRICS
(2023)
Article
Nanoscience & Nanotechnology
Li Ren, Qiuhong Tan, Kunpeng Gao, Peizhi Yang, Qianjin Wang, Yingkai Liu
Summary: This paper introduces a high-quality 1D CdSe/CsPbBr3 hybrid photodetector, which shows superior performance compared to single CsPbBr3 photodetectors and extends the response range. First-principles calculations reveal that the improved optoelectronic properties are attributed to the high crystalline quality and unique band alignment of the hybrid structure.
Article
Chemistry, Physical
Qiuhong Tan, Qianjin Wang, Chao Zhang, Kunpeng Gao, Yuanfangzhou Wang, Chen Qing, Yingkai Liu, Dapeng Yu
Summary: The composite materials of carbon nanotubes (CNT) and perovskites have received significant attention for their potential applications in photovoltaic and optoelectronic devices. In this study, the band alignment of the CNT/CH3NH3PbI3 heterojunction was systematically investigated, revealing different alignment types depending on the termination of the perovskite surface, and showing the ability to modify the alignment type with electric fields. This research provides insights into the interfacial electronic structure of CNT/perovskite heterojunctions, offering a new approach for designing optoelectronic devices.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2021)
