Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer
Published 2018 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Single-Walled Carbon Nanotube Dominated Micron-Wide Stripe Patterned-Based Ferroelectric Field-Effect Transistors with HfO2 Defect Control Layer
Authors
Keywords
Ferroelectric field-effect transistors (FeFETs), Single-walled carbon nanotube (SWCNT), Nonvolatile memory, Ferroelectric film
Journal
Nanoscale Research Letters
Volume 13, Issue 1, Pages -
Publisher
Springer Nature
Online
2018-04-27
DOI
10.1186/s11671-018-2534-1
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Flexible graphene field effect transistor with ferroelectric polymer gate
- (2016) Xudong Wang et al. OPTICAL AND QUANTUM ELECTRONICS
- Space-charge dominated epitaxial BaTiO3 heterostructures
- (2015) Wei Zhang et al. ACTA MATERIALIA
- Advances in MoS2-Based Field Effect Transistors (FETs)
- (2015) Xin Tong et al. Nano-Micro Letters
- Advances in MoS2-Based Field Effect Transistors (FETs)
- (2015) Xin Tong et al. Nano-Micro Letters
- Junctionless ferroelectric field effect transistors based on ultrathin silicon nanomembranes
- (2015) Ronggen Cao et al. Nanoscale Research Letters
- Ferroelectric field-effect transistors based on multi-walled carbon nanotube micron-wide stripe arrays
- (2014) H. J. Song et al. APPLIED PHYSICS LETTERS
- Understanding polarization vs. charge dynamics effects in ferroelectric-carbon nanotube devices
- (2013) Cédric Blaser et al. APPLIED PHYSICS LETTERS
- The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
- (2013) Jen-Wei Huang et al. APPLIED PHYSICS LETTERS
- Control of Current Hysteresis of Networked Single-Walled Carbon Nanotube Transistors by a Ferroelectric Polymer Gate Insulator
- (2012) Yeon Sik Choi et al. ADVANCED FUNCTIONAL MATERIALS
- Sources of Hysteresis in Carbon Nanotube Field-Effect Transistors and Their Elimination Via Methylsiloxane Encapsulants and Optimized Growth Procedures
- (2012) Sung Hun Jin et al. ADVANCED FUNCTIONAL MATERIALS
- Polar ZnO thin-film nonvolatile transistors with (Bi, Nd)4Ti3O12gate insulators
- (2012) Q. H. Tan et al. EPL
- Effects of space charge distribution on ferroelectric hysteresis loops considering the inhomogeneous built-in electric field: A phase field simulation
- (2012) X. L. Wang et al. JOURNAL OF APPLIED PHYSICS
- Ferroelectric–carbon nanotube memory devices
- (2012) Ashok Kumar et al. NANOTECHNOLOGY
- Ferroelectric memory based on nanostructures
- (2012) Xingqiang Liu et al. Nanoscale Research Letters
- Impact of ZnO Polarization on the Characteristics of Metal–Ferroelectric–ZnO Field Effect Transistor
- (2011) Qiuhong Tan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- A Nonvolatile Memory Device Made of a Ferroelectric Polymer Gate Nanodot and a Single-Walled Carbon Nanotube
- (2010) Jong Yeog Son et al. ACS Nano
- Intrinsic Memory Function of Carbon Nanotube-based Ferroelectric Field-Effect Transistor
- (2009) Wangyang Fu et al. NANO LETTERS
- Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors
- (2008) Hiroshi Ishiwara CURRENT APPLIED PHYSICS
- Enhancement of fatigue endurance and retention characteristic in Bi3.25Eu0.75Ti3O12 thin films
- (2008) X.J. Zheng et al. MATERIALS LETTERS
Create your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create NowBecome a Peeref-certified reviewer
The Peeref Institute provides free reviewer training that teaches the core competencies of the academic peer review process.
Get Started