Multigate Ferroelectric Transistor Design Toward 3-nm Technology Node

Published 2021 View Full Article

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Title
Multigate Ferroelectric Transistor Design Toward 3-nm Technology Node
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 68, Issue 11, Pages 5908-5911
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2021-09-10
DOI
10.1109/ted.2021.3108477

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