Diffusion length of non-equilibrium minority charge carriers in β-Ga2O3 measured by electron beam induced current

On the feasibility of p-type Ga2O3

(2018) Alexandros Kyrtsos et al.   APPLIED PHYSICS LETTERS

Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

(2018) Jonathan Lee et al.   APPLIED PHYSICS LETTERS

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

(2018) A. Y. Polyakov et al.   APPLIED PHYSICS LETTERS

Iron and intrinsic deep level states in Ga2O3

(2018) M. E. Ingebrigtsen et al.   APPLIED PHYSICS LETTERS

A review of Ga2O3 materials, processing, and devices

(2018) S. J. Pearton et al.   Applied Physics Reviews

Perspective—Opportunities and Future Directions for Ga 2 O 3

(2017) Michael A. Mastro et al.   ECS Journal of Solid State Science and Technology

Group-III Sesquioxides: Growth, Physical Properties and Devices

(2017) Holger von Wenckstern   Advanced Electronic Materials

Ultrawide-Bandgap Semiconductors: Research Opportunities and Challenges

(2017) J. Y. Tsao et al.   Advanced Electronic Materials

Effect of front and back gates on β-Ga2O3 nano-belt field-effect transistors

(2016) Shihyun Ahn et al.   APPLIED PHYSICS LETTERS

Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy

(2016) Z. Zhang et al.   APPLIED PHYSICS LETTERS

Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition

(2016) Subrina Rafique et al.   APPLIED PHYSICS LETTERS

Field-Plated Ga2O3MOSFETs With a Breakdown Voltage of Over 750 V

(2016) Man Hoi Wong et al.   IEEE ELECTRON DEVICE LETTERS

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3MOSFETs

(2016) Andrew J. Green et al.   IEEE ELECTRON DEVICE LETTERS

High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

(2016) Akito Kuramata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN

(2016) A.Y. Polyakov et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

(2016) Marko J. Tadjer et al.   JOURNAL OF ELECTRONIC MATERIALS

Communication—A (001) β-Ga2O3MOSFET with +2.9 V Threshold Voltage and HfO2Gate Dielectric

(2016) Marko J. Tadjer et al.   ECS Journal of Solid State Science and Technology

Electrical compensation by Ga vacancies in Ga2O3 thin films

(2015) E. Korhonen et al.   APPLIED PHYSICS LETTERS

What is the real value of diffusion length in GaN?

(2015) E.B. Yakimov   JOURNAL OF ALLOYS AND COMPOUNDS

Structural properties of Si-doped β-Ga2O3 layers grown by MOVPE

(2013) D. Gogova et al.   JOURNAL OF CRYSTAL GROWTH

Development of gallium oxide power devices

(2013) Masataka Higashiwaki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Role of self-trapping in luminescence andp-type conductivity of wide-band-gap oxides

(2012) J. B. Varley et al.   PHYSICAL REVIEW B

Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method

(2011) K. Irmscher et al.   JOURNAL OF APPLIED PHYSICS

Oxygen vacancies and donor impurities in β-Ga2O3

(2010) J. B. Varley et al.   APPLIED PHYSICS LETTERS

Study of dislocation EBIC image width in GaN films and GaN based structures

(2009) P. S. Vergeles et al.   Journal of Surface Investigation-X-Ray Synchrotron and Neutron Techniques

SEM–EBIC investigation of silicon, compensated by zinc during high temperature diffusion annealing

(2008) E. B. Yakimov et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS