Impact of crystal orientation on the modulation bandwidth of InGaN/GaN light-emitting diodes

High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication

(2017) Arman Rashidi et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes

(2017) A. Rashidi et al.   JOURNAL OF APPLIED PHYSICS

Internal quantum efficiency and carrier dynamics in semipolar (2021) InGaN/GaN light-emitting diodes

(2017) Serdal Okur et al.   OPTICS EXPRESS

Explanation of low efficiency droop in semipolar (202¯1¯) InGaN/GaN LEDs through evaluation of carrier recombination coefficients

(2017) Morteza Monavarian et al.   OPTICS EXPRESS

A review of gallium nitride LEDs for multi-gigabit-per-second visible light data communications

(2017) Sujan Rajbhandari et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

III-Nitride Based Cyan Light-Emitting Diodes with GHz Bandwidth for High-Speed Visible Light Communication

(2016) Jin-Wei Shi et al.   IEEE ELECTRON DEVICE LETTERS

High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

(2016) Ricardo X. G. Ferreira et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes

(2016) Duc V. Dinh et al.   OPTICS LETTERS

High Bandwidth Freestanding Semipolar (11–22) InGaN/GaN Light-Emitting Diodes

(2016) Zhiheng Quan et al.   IEEE Photonics Journal

Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication

(2016) Chunhua Du et al.   Scientific Reports

The efficiency challenge of nitride light-emitting diodes for lighting

(2015) Claude Weisbuch et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

(2014) D. Rosales et al.   JOURNAL OF APPLIED PHYSICS

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

(2014) D. Rosales et al.   JOURNAL OF APPLIED PHYSICS

High-Speed GaN-Based Blue Light-Emitting Diodes With Gallium-Doped ZnO Current Spreading Layer

(2013) Chien-Lan Liao et al.   IEEE ELECTRON DEVICE LETTERS

Semipolar $({\hbox{20}}\bar\hbox{2\bar\hbox{1)$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

(2013) Daniel F. Feezell et al.   Journal of Display Technology

Efficiency droop in light-emitting diodes: Challenges and countermeasures

(2013) Jaehee Cho et al.   Laser & Photonics Reviews

Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

(2013) Emmanouil Kioupakis et al.   NEW JOURNAL OF PHYSICS

Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes

(2012) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

(2010) Aurélien David et al.   APPLIED PHYSICS LETTERS

High-Speed Visible Light Communications Using Individual Pixels in a Micro Light-Emitting Diode Array

(2010) Jonathan J. D. McKendry et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Efficiency droop in nitride-based light-emitting diodes

(2010) Joachim Piprek   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE