Journal
OPTICS LETTERS
Volume 41, Issue 24, Pages 5752-5755Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.41.005752
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Funding
- Seventh Framework Programme (FP7) [280587]
- Science Foundation Ireland (SFI) [12/RC/2276]
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We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (11 (2) over bar2) InGaN/GaN light-emitting diodes (LEDs) operating at 430-450 nm grown on high-quality (11 (2) over bar2) GaN templates, which were prepared on patterned (10 (1) over bar2) r-plane sapphire substrates. The measured frequency response at -3 dB of the LEDs was up to 1 GHz. A high back-to-back data transmission rate of above 2.4 Gbps is demonstrated using a non-return-to-zero on-off keying modulation scheme. This indicates that (11 (2) over bar2) LEDs are suitable gigabit per second data transmission for use in visible-light communication applications. (C) 2016 Optical Society of America
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