Journal
JOURNAL OF APPLIED PHYSICS
Volume 115, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4865959
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Funding
- Materials World Network grant from the National Science Foundation [DMR-1210282]
- GANEX [ANR-11-LABX-0014]
- international ANR GASIOPHE
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1210282] Funding Source: National Science Foundation
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The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8K-300K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells. (C) 2014 AIP Publishing LLC.
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