4.5 Article

High-Speed Nonpolar InGaN/GaN LEDs for Visible-Light Communication

Journal

IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 29, Issue 4, Pages 381-384

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2017.2650681

Keywords

Light-emitting diodes; gallium nitride; nonpolar; modulation bandwidth; visible light communication

Funding

  1. Department of Defense [W911NF-15-1-0428]

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Free-standing nonpolar GaN substrates provide an excellent platform for the fabrication of high-speed blue and green light-emitting diodes (LEDs), which are attractive for visible-light communication, plastic optical fiber communication, and short-range under water optical communication. Nonpolar LEDs on free-standing GaN exhibit a large electron-hole wave function overlap, low extended defect density, and favorable thermal properties. Here, we demonstrate high-speed nonpolar InGaN/GaN LEDs with a peak emission wavelength between 455 and 465 nm on free-standing nonpolar GaN substrates. A large frequency modulation bandwidth of 524 MHz is demonstrated at a current density of 10 kA/cm(2).

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