Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics

Published 2014 View Full Article

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Title
Lateral MoS2 p–n Junction Formed by Chemical Doping for Use in High-Performance Optoelectronics
Authors
Keywords
-
Journal
ACS Nano
Volume 8, Issue 9, Pages 9332-9340
Publisher
American Chemical Society (ACS)
Online
2014-08-18
DOI
10.1021/nn503284n

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