Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

Title
Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM
Authors
Keywords
-
Journal
NPG Asia Materials
Volume 7, Issue 6, Pages e194-e194
Publisher
Springer Nature
Online
2015-06-26
DOI
10.1038/am.2015.49

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