Resistive switching properties in oxygen-deficient Pr0.7Ca0.3MnO3 junctions with active Al top electrodes

Origin of Negative Differential Resistance Observed on Bipolar Resistance Switching Device with Ti/Pr0.7Ca0.3MnO3/Pt Structure

(2008) Keiji Shono et al.   Applied Physics Express

Enhancement of Switching Capability on Bipolar Resistance Switching Device with Ta/Pr0.7Ca0.3MnO3/Pt Structure

(2008) Hiroyasu Kawano et al.   Applied Physics Express

Resistive switching of aluminum oxide for flexible memory

(2008) Sungho Kim et al.   APPLIED PHYSICS LETTERS

Trap-controlled space-charge-limited current mechanism in resistance switching at Al∕Pr0.7Ca0.3MnO3 interface

(2008) T. Harada et al.   APPLIED PHYSICS LETTERS

Uniform resistive switching with a thin reactive metal interface layer in metal-La0.7Ca0.3MnO3-metal heterostructures

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Effects of metal electrodes on the resistive memory switching property of NiO thin films

(2008) C. B. Lee et al.   APPLIED PHYSICS LETTERS

Structure Effects on Resistive Switching of $ \hbox{Al/TiO}_{x}/\hbox{Al}$ Devices for RRAM Applications

(2008) Lee-Eun Yu et al.   IEEE ELECTRON DEVICE LETTERS

Reproducible low-voltage resistive switching in a low-initial-resistance Pr0.7Ca0.3MnO3junction

(2008) Song-Lin Li et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS