Understanding the Switching Oxide Defect Formation and Recovery on HfOxBased RRAM Device

HfO2-Based RRAM: Electrode Effects, Ti/HfO2 Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

(2016) Boubacar Traore et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A physical-based simulation for the dynamic behavior of photodoping mechanism in chalcogenide materials used in the lateral programmable metallization cells

(2016) Mehdi Saremi   SOLID STATE IONICS

Role of metal-oxide interfaces in the multiple resistance switching regimes of Pt/HfO2/TiN devices

(2015) S. Brivio et al.   APPLIED PHYSICS LETTERS

Static impedance behavior of programmable metallization cells

(2015) S. Rajabi et al.   SOLID-STATE ELECTRONICS

Analytical Relationship between Anion Formation and Carrier-Trap Statistics in Chalcogenide Glass Films

(2015) M. Saremi et al.   ECS Electrochemistry Letters

Role of interfacial layer on complementary resistive switching in the TiN/HfOx/TiN resistive memory device

(2014) H. Z. Zhang et al.   APPLIED PHYSICS LETTERS

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells

(2014) Malgorzata Sowinska et al.   JOURNAL OF APPLIED PHYSICS

Roles and Effects of TiN and Pt Electrodes in Resistive-Switching HfO2 Systems

(2011) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Temperature Instability of Resistive Switching on $ \hbox{HfO}_{x}$-Based RRAM Devices

(2010) Z Fang et al.   IEEE ELECTRON DEVICE LETTERS

An Ultrathin Forming-Free $\hbox{HfO}_{x}$ Resistance Memory With Excellent Electrical Performance

(2010) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

A Phenomenological Model for the Reset Mechanism of Metal Oxide RRAM

(2010) Shimeng Yu et al.   IEEE ELECTRON DEVICE LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Impact of Electrode Materials on Resistive-Switching Memory Programming

(2009) U. Russo et al.   IEEE ELECTRON DEVICE LETTERS

AmorphousHfO2andHf1−xSixOvia a melt-and-quench scheme usingab initiomolecular dynamics

(2008) Wanderlã L. Scopel et al.   PHYSICAL REVIEW B