Shock Waves and Commutation Speed of Memristors

Tuning the resistive switching properties of TiO2−x films

(2015) N. Ghenzi et al.   APPLIED PHYSICS LETTERS

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Spectroscopic Proof of the Correlation between Redox-State and Charge-Carrier Transport at the Interface of Resistively Switching Ti/PCMO Devices

(2014) Anja Herpers et al.   ADVANCED MATERIALS

Nonvolatile Multilevel Resistive Switching Memory Cell: A Transition Metal Oxide-Based Circuit

(2014) P. Stoliar et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS

Robust Compact Model for Bipolar Oxide-Based Resistive Switching Memories

(2014) Marc Bocquet et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhancement of resistive switching effect in double-layered Pt/Pr0.7Ca0.3MnO3/La0.6Pr0.4MnO3/SrNb0.01Ti0.99O3 heterostructure

(2014) Yu-ling Jin et al.   PHYSICA B-CONDENSED MATTER

Two opposite hysteresis curves in semiconductors with mobile dopants

(2013) Jae Sung Lee et al.   APPLIED PHYSICS LETTERS

A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations

(2013) Peng Huang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Modeling electronic transport mechanisms in metal-manganite memristive interfaces

(2013) F. Gomez-Marlasca et al.   JOURNAL OF APPLIED PHYSICS

Interplay of cross-plane polaronic transport and resistive switching in Pt–Pr0.67Ca0.33MnO3–Pt heterostructures

(2013) M Scherff et al.   NEW JOURNAL OF PHYSICS

A new route to the Mott-Hubbard metal-insulator transition: Strong correlations effects in Pr0.7Ca0.3MnO3

(2013) Hong Sub Lee et al.   Scientific Reports

Metal oxide memories based on thermochemical and valence change mechanisms

(2012) J. Joshua Yang et al.   MRS BULLETIN

High precision tuning of state for memristive devices by adaptable variation-tolerant algorithm

(2012) Fabien Alibart et al.   NANOTECHNOLOGY

Self-formed Schottky barrier induced selector-less RRAM for cross-point memory applications

(2012) Sangsu Park et al.   Physica Status Solidi-Rapid Research Letters

Origin of the Ultra-nonlinear Switching Kinetics in Oxide-Based Resistive Switches

(2011) Stephan Menzel et al.   ADVANCED FUNCTIONAL MATERIALS

Computational investigations into the operating window for memristive devices based on homogeneous ionic motion

(2011) Mohammad Noman et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

(2011) Daniele Ielmini   IEEE TRANSACTIONS ON ELECTRON DEVICES

Hysteresis switching loops in Ag-manganite memristive interfaces

(2010) N. Ghenzi et al.   JOURNAL OF APPLIED PHYSICS

Mechanism for bipolar resistive switching in transition-metal oxides

(2010) M. J. Rozenberg et al.   PHYSICAL REVIEW B

Modeling for bipolar resistive memory switching in transition-metal oxides

(2010) Ji Hyun Hur et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior

(2009) Dmitri B. Strukov et al.   Small

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology