Electronic Conduction in Ti/Poly-TiO2/Ti Structures

Resistive Switching of a Quasi-Homogeneous Distribution of Filaments Generated at Heat-Treated TiO2(110)-Surfaces

(2015) Maciej Rogala et al.   ADVANCED FUNCTIONAL MATERIALS

Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament

(2015) Jui-Yuan Chen et al.   ADVANCED MATERIALS

Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation

(2015) Guoming Wang et al.   APPLIED PHYSICS LETTERS

16 Boolean logics in three steps with two anti-serially connected memristors

(2015) Yaxiong Zhou et al.   APPLIED PHYSICS LETTERS

The energy barrier at noble metal/TiO2 junctions

(2015) F. Hossein-Babaei et al.   APPLIED PHYSICS LETTERS

Atomic View of Filament Growth in Electrochemical Memristive Elements

(2015) Hangbing Lv et al.   Scientific Reports

The Missing Memristor has Not been Found

(2015) Sascha Vongehr et al.   Scientific Reports

Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon

(2014) Chengqing Hu et al.   NANO LETTERS

On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology

(2012) Ximeng Guan et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Oxygen vacancy filament formation in TiO2: A kinetic Monte Carlo study

(2012) Duo Li et al.   JOURNAL OF APPLIED PHYSICS

Quantitative theory of the oxygen vacancy and carrier self-trapping in bulk TiO2

(2012) Peter Deák et al.   PHYSICAL REVIEW B

Fabrication of TiO2 thin film memristor device using electrohydrodynamic inkjet printing

(2012) Navaneethan Duraisamy et al.   THIN SOLID FILMS

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks

(2011) Yoon Cheol Bae et al.   ADVANCED FUNCTIONAL MATERIALS

Metal/TiO2 interfaces for memristive switches

(2011) J. Joshua Yang et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Resistance switching memories are memristors

(2011) Leon Chua   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Realization of Rectifying and Resistive Switching Behaviors of TiO2 Nanorod Arrays for Nonvolatile Memory

(2011) Feng Zhang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Density functional theory study of TiO2/Ag interfaces and their role in memristor devices

(2011) Stefano Prada et al.   PHYSICAL REVIEW B

Large area Ag–TiO2 UV radiation sensor fabricated on a thermally oxidized titanium chip

(2011) Faramarz Hossein-Babaei et al.   SENSORS AND ACTUATORS A-PHYSICAL

Separate assessment of chemoresistivity and Schottky-type gas sensitivity in M–metal oxide–M′ structures

(2011) F. Hossein-Babaei et al.   SENSORS AND ACTUATORS B-CHEMICAL

Titanium and silver contacts on thermally oxidized titanium chip: Electrical and gas sensing properties

(2011) F. Hossein-Babaei et al.   SOLID-STATE ELECTRONICS

Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices

(2010) Hu Young Jeong et al.   ADVANCED FUNCTIONAL MATERIALS

Hysteresis switching loops in Ag-manganite memristive interfaces

(2010) N. Ghenzi et al.   JOURNAL OF APPLIED PHYSICS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions

(2009) Young Ho Do et al.   APPLIED PHYSICS LETTERS

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY

Formation and Diffusion of Water Dimers on RutileTiO2(110)

(2009) J. Matthiesen et al.   PHYSICAL REVIEW LETTERS

Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory

(2008) Myoung-Jae Lee et al.   ADVANCED FUNCTIONAL MATERIALS

Exponential ionic drift: fast switching and low volatility of thin-film memristors

(2008) Dmitri B. Strukov et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Selective formation of Ohmic junctions and Schottky barriers with electrodeposited ZnO

(2008) Shawn Chatman et al.   APPLIED PHYSICS LETTERS

Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere

(2008) Doo Seok Jeong et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching in transition metal oxides

(2008) Akihito Sawa   Materials Today

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology