标题
Electronic Conduction in Ti/Poly-TiO2/Ti Structures
作者
关键词
-
出版物
Scientific Reports
Volume 6, Issue 1, Pages -
出版商
Springer Nature
发表日期
2016-07-12
DOI
10.1038/srep29624
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Resistive Switching of a Quasi-Homogeneous Distribution of Filaments Generated at Heat-Treated TiO2(110)-Surfaces
- (2015) Maciej Rogala et al. ADVANCED FUNCTIONAL MATERIALS
- Switching Kinetic of VCM-Based Memristor: Evolution and Positioning of Nanofilament
- (2015) Jui-Yuan Chen et al. ADVANCED MATERIALS
- Improving resistance uniformity and endurance of resistive switching memory by accurately controlling the stress time of pulse program operation
- (2015) Guoming Wang et al. APPLIED PHYSICS LETTERS
- 16 Boolean logics in three steps with two anti-serially connected memristors
- (2015) Yaxiong Zhou et al. APPLIED PHYSICS LETTERS
- The energy barrier at noble metal/TiO2 junctions
- (2015) F. Hossein-Babaei et al. APPLIED PHYSICS LETTERS
- Atomic View of Filament Growth in Electrochemical Memristive Elements
- (2015) Hangbing Lv et al. Scientific Reports
- The Missing Memristor has Not been Found
- (2015) Sascha Vongehr et al. Scientific Reports
- Highly Controllable and Stable Quantized Conductance and Resistive Switching Mechanism in Single-Crystal TiO2 Resistive Memory on Silicon
- (2014) Chengqing Hu et al. NANO LETTERS
- On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
- (2012) Ximeng Guan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Oxygen vacancy filament formation in TiO2: A kinetic Monte Carlo study
- (2012) Duo Li et al. JOURNAL OF APPLIED PHYSICS
- Quantitative theory of the oxygen vacancy and carrier self-trapping in bulk TiO2
- (2012) Peter Deák et al. PHYSICAL REVIEW B
- Fabrication of TiO2 thin film memristor device using electrohydrodynamic inkjet printing
- (2012) Navaneethan Duraisamy et al. THIN SOLID FILMS
- Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks
- (2011) Yoon Cheol Bae et al. ADVANCED FUNCTIONAL MATERIALS
- Metal/TiO2 interfaces for memristive switches
- (2011) J. Joshua Yang et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Resistance switching memories are memristors
- (2011) Leon Chua APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Realization of Rectifying and Resistive Switching Behaviors of TiO2 Nanorod Arrays for Nonvolatile Memory
- (2011) Feng Zhang et al. ELECTROCHEMICAL AND SOLID STATE LETTERS
- Density functional theory study of TiO2/Ag interfaces and their role in memristor devices
- (2011) Stefano Prada et al. PHYSICAL REVIEW B
- Large area Ag–TiO2 UV radiation sensor fabricated on a thermally oxidized titanium chip
- (2011) Faramarz Hossein-Babaei et al. SENSORS AND ACTUATORS A-PHYSICAL
- Separate assessment of chemoresistivity and Schottky-type gas sensitivity in M–metal oxide–M′ structures
- (2011) F. Hossein-Babaei et al. SENSORS AND ACTUATORS B-CHEMICAL
- Titanium and silver contacts on thermally oxidized titanium chip: Electrical and gas sensing properties
- (2011) F. Hossein-Babaei et al. SOLID-STATE ELECTRONICS
- Interface-Engineered Amorphous TiO2-Based Resistive Memory Devices
- (2010) Hu Young Jeong et al. ADVANCED FUNCTIONAL MATERIALS
- Hysteresis switching loops in Ag-manganite memristive interfaces
- (2010) N. Ghenzi et al. JOURNAL OF APPLIED PHYSICS
- ‘Memristive’ switches enable ‘stateful’ logic operations via material implication
- (2010) Julien Borghetti et al. NATURE
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- Hysteretic bipolar resistive switching characteristics in TiO2/TiO2−x multilayer homojunctions
- (2009) Young Ho Do et al. APPLIED PHYSICS LETTERS
- The mechanism of electroforming of metal oxide memristive switches
- (2009) J Joshua Yang et al. NANOTECHNOLOGY
- Formation and Diffusion of Water Dimers on RutileTiO2(110)
- (2009) J. Matthiesen et al. PHYSICAL REVIEW LETTERS
- Low-Temperature-Grown Transition Metal Oxide Based Storage Materials and Oxide Transistors for High-Density Non-volatile Memory
- (2008) Myoung-Jae Lee et al. ADVANCED FUNCTIONAL MATERIALS
- Exponential ionic drift: fast switching and low volatility of thin-film memristors
- (2008) Dmitri B. Strukov et al. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
- Selective formation of Ohmic junctions and Schottky barriers with electrodeposited ZnO
- (2008) Shawn Chatman et al. APPLIED PHYSICS LETTERS
- Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere
- (2008) Doo Seok Jeong et al. JOURNAL OF APPLIED PHYSICS
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- The missing memristor found
- (2008) Dmitri B. Strukov et al. NATURE
- Memristive switching mechanism for metal/oxide/metal nanodevices
- (2008) J. Joshua Yang et al. Nature Nanotechnology
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