Resistive Switching of a Quasi-Homogeneous Distribution of Filaments Generated at Heat-Treated TiO2(110)-Surfaces

Resistive Switching Effect in Titanium Oxides

(2014) Zhensen Tang et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review

(2014) D. Acharyya et al.   MICROELECTRONICS RELIABILITY

Evolution of conduction channel and its effect on resistance switching for Au-WO3-x–Au devices

(2014) D. S. Hong et al.   Scientific Reports

Quasi-two-dimensional conducting layer on TiO2 (110) introduced by sputtering as a template for resistive switching

(2013) M. Rogala et al.   APPLIED PHYSICS LETTERS

TiO2-based structures for nanoscale memory applications

(2013) K. Fröhlich   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Characterization of electroforming-free titanium dioxide memristors

(2013) John Paul Strachan et al.   Beilstein Journal of Nanotechnology

First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides

(2012) Blanka Magyari-Köpe et al.   JOURNAL OF MATERIALS SCIENCE

First principles modeling of charged oxygen vacancy filaments in reduced TiO 2 –implications to the operation of non-volatile memory devices

(2012) Liang Zhao et al.   MATHEMATICAL AND COMPUTER MODELLING

Emerging memories: resistive switching mechanisms and current status

(2012) Doo Seok Jeong et al.   REPORTS ON PROGRESS IN PHYSICS

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

(2011) Kyung Min Kim et al.   NANOTECHNOLOGY

TiO2—a prototypical memristive material

(2011) K Szot et al.   NANOTECHNOLOGY

Direct Identification of the Conducting Channels in a Functioning Memristive Device

(2010) John Paul Strachan et al.   ADVANCED MATERIALS

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

Electronic correlation effects in reduced rutileTiO2within theLDA+Umethod

(2010) Seong-Geon Park et al.   PHYSICAL REVIEW B

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Stability and Electronic Properties of TiO2 Nanostructures With and Without B and N Doping

(2009) D. J. Mowbray et al.   Journal of Physical Chemistry C

The mechanism of electroforming of metal oxide memristive switches

(2009) J Joshua Yang et al.   NANOTECHNOLOGY