Pressure coefficients for direct optical transitions in MoS2, MoSe2, WS2, and WSe2 crystals and semiconductor to metal transitions

Pressure-Modulated Conductivity, Carrier Density, and Mobility of Multilayered Tungsten Disulfide

(2015) Avinash P. Nayak et al.   ACS Nano

H-point exciton transitions in bulk MoS2

(2015) Nihit Saigal et al.   APPLIED PHYSICS LETTERS

Physical and chemical tuning of two-dimensional transition metal dichalcogenides

(2015) Haotian Wang et al.   CHEMICAL SOCIETY REVIEWS

Influence of rhenium on the structural and optical properties of molybdenum disulfide

(2015) Mula Sigiro et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

The Electronic Properties of Single-Layer and Multilayer MoS2 under High Pressure

(2015) Xiaofeng Fan et al.   Journal of Physical Chemistry C

First-principles calculations of bismuth induced changes in the band structure of dilute Ga–V–Bi and In–V–Bi alloys: chemical trends versus experimental data

(2015) M P Polak et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

k·ptheory for two-dimensional transition metal dichalcogenide semiconductors

(2015) Andor Kormányos et al.   2D Materials

Transition Metal Chalcogenides: Ultrathin Inorganic Materials with Tunable Electronic Properties

(2014) Thomas Heine   ACCOUNTS OF CHEMICAL RESEARCH

Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

(2014) Deep Jariwala et al.   ACS Nano

Electronic properties of single-layer and multilayer transition metal dichalcogenidesMX2(M= Mo, W andX= S, Se)

(2014) Rafael Roldán et al.   ANNALEN DER PHYSIK

Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide

(2014) Avinash P. Nayak et al.   Nature Communications

An efficient method of DFT/LDA band-gap correction

(2013) Pawel Scharoch et al.   COMPUTER PHYSICS COMMUNICATIONS

High pressure effect on structure, electronic structure, and thermoelectric properties of MoS2

(2013) Huaihong Guo et al.   JOURNAL OF APPLIED PHYSICS

Density Functional Theory and Beyond for Band-Gap Screening: Performance for Transition-Metal Oxides and Dichalcogenides

(2013) Wenqing Li et al.   Journal of Chemical Theory and Computation

Semiconductor to metal transition in bilayer transition metals dichalcogenidesMX2(M= Mo, W;X= S, Se, Te)

(2013) Ashok Kumar et al.   MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING

Bandgap Engineering of Strained Monolayer and Bilayer MoS2

(2013) Hiram J. Conley et al.   NANO LETTERS

Experimental Demonstration of Continuous Electronic Structure Tuning via Strain in Atomically Thin MoS2

(2013) Keliang He et al.   NANO LETTERS

Origin of Indirect Optical Transitions in Few-Layer MoS2, WS2, and WSe2

(2013) Weijie Zhao et al.   NANO LETTERS

Structure change, layer sliding, and metallization in high-pressure MoS2

(2013) Liliana Hromadová et al.   PHYSICAL REVIEW B

Strain-dependent modulation of conductivity in single-layer transition-metal dichalcogenides

(2013) M. Ghorbani-Asl et al.   PHYSICAL REVIEW B

Orbital analysis of electronic structure and phonon dispersion in MoS2, MoSe2, WS2, and WSe2monolayers under strain

(2013) Chung-Huai Chang et al.   PHYSICAL REVIEW B

Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe2

(2013) S. Horzum et al.   PHYSICAL REVIEW B

Graphene-analogous low-dimensional materials

(2013) Qing Tang et al.   PROGRESS IN MATERIALS SCIENCE

Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

(2012) Priya Johari et al.   ACS Nano

Temperature dependence of E0 and E0 + ΔSO transitions in In0.53Ga0.47BixAs1−x alloys studied by photoreflectance

(2012) R. Kudrawiec et al.   JOURNAL OF APPLIED PHYSICS

Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides

(2012) Swastibrata Bhattacharyya et al.   PHYSICAL REVIEW B

Effects of confinement and environment on the electronic structure and exciton binding energy of MoS2from first principles

(2012) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Performance of the modified Becke-Johnson potential for semiconductors

(2012) J. A. Camargo-Martínez et al.   PHYSICAL REVIEW B

Effects of strain on band structure and effective masses in MoS2

(2012) H. Peelaers et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Photoreflectance study of N- and Sb-related modifications of the energy gap and spin-orbit splitting in InNAsSb alloys

(2011) R. Kudrawiec et al.   APPLIED PHYSICS LETTERS

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu

(2010) Stefan Grimme et al.   JOURNAL OF CHEMICAL PHYSICS

Towards efficient band structure and effective mass calculations for III-V direct band-gap semiconductors

(2010) Yoon-Suk Kim et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

ABINIT: First-principles approach to material and nanosystem properties

(2009) X. Gonze et al.   COMPUTER PHYSICS COMMUNICATIONS

Temperature dependence of the optical transitions in Ga0.64In0.36N0.046As0.954 multiquantum wells of various widths studied by photoreflectance

(2009) R. Kudrawiec et al.   JOURNAL OF APPLIED PHYSICS

Accurate Band Gaps of Semiconductors and Insulators with a Semilocal Exchange-Correlation Potential

(2009) Fabien Tran et al.   PHYSICAL REVIEW LETTERS

Generating relativistic pseudo-potentials with explicit incorporation of semi-core states using APE, the Atomic Pseudo-potentials Engine

(2007) Micael J.T. Oliveira et al.   COMPUTER PHYSICS COMMUNICATIONS