Semiconductor to metal transition in bilayer transition metals dichalcogenidesMX2(M= Mo, W;X= S, Se, Te)

Tuning the Electronic Properties of Semiconducting Transition Metal Dichalcogenides by Applying Mechanical Strains

(2012) Priya Johari et al.   ACS Nano

Electric Field Effects on Armchair MoS2 Nanoribbons

(2012) Kapildeb Dolui et al.   ACS Nano

Synthesis of Large-Area MoS2Atomic Layers with Chemical Vapor Deposition

(2012) Yi-Hsien Lee et al.   ADVANCED MATERIALS

Electronic structure of transition metal dichalcogenides monolayers 1H-MX2 (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors

(2012) A. Kumar et al.   EUROPEAN PHYSICAL JOURNAL B

Electronic Band Structures of Molybdenum and Tungsten Dichalcogenides by the GW Approach

(2012) Hong Jiang   Journal of Physical Chemistry C

Tuning Electronic Structure of Bilayer MoS2 by Vertical Electric Field: A First-Principles Investigation

(2012) Qihang Liu et al.   Journal of Physical Chemistry C

Stable, Single-Layer MX2 Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure

(2012) C. Ataca et al.   Journal of Physical Chemistry C

A first principle Comparative study of electronic and optical properties of 1H – MoS2 and 2H – MoS2

(2012) Ashok Kumar et al.   MATERIALS CHEMISTRY AND PHYSICS

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

(2012) Keng-Ku Liu et al.   NANO LETTERS

Strain-engineered artificial atom as a broad-spectrum solar energy funnel

(2012) Ji Feng et al.   Nature Photonics

Tunable dielectric response of transition metals dichalcogenides MX2 (M=Mo, W; X=S, Se, Te): Effect of quantum confinement

(2012) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

A first principle study of interband transitions and electron energy loss in mono and bilayer graphene: Effect of external electric field

(2012) Brij Mohan et al.   PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES

Strain-dependent electronic and magnetic properties of MoS2 monolayer, bilayer, nanoribbons and nanotubes

(2012) Peng Lu et al.   PHYSICAL CHEMISTRY CHEMICAL PHYSICS

Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides

(2012) Swastibrata Bhattacharyya et al.   PHYSICAL REVIEW B

Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2semiconductors (M=Mo, W;X=S, Se, Te)

(2012) Won Seok Yun et al.   PHYSICAL REVIEW B

Large excitonic effects in monolayers of molybdenum and tungsten dichalcogenides

(2012) Ashwin Ramasubramaniam   PHYSICAL REVIEW B

Quasiparticle band structure calculation of monolayer, bilayer, and bulk MoS2

(2012) Tawinan Cheiwchanchamnangij et al.   PHYSICAL REVIEW B

Large-Area Vapor-Phase Growth and Characterization of MoS2Atomic Layers on a SiO2Substrate

(2012) Yongjie Zhan et al.   Small

Mechanical properties of freely suspended semiconducting graphene-like layers based on MoS2

(2012) Andres Castellanos-Gomez et al.   Nanoscale Research Letters

Stretching and Breaking of Ultrathin MoS2

(2011) Simone Bertolazzi et al.   ACS Nano

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Ab initio study of platinum induced reconstructions on Ge(001)–(1×2) surface with dimerization

(2011) Ashok Kumar et al.   PHYSICA B-CONDENSED MATTER

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

(2011) Yi Ding et al.   PHYSICA B-CONDENSED MATTER

Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2

(2011) A. Kuc et al.   PHYSICAL REVIEW B

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

(2011) J. N. Coleman et al.   SCIENCE

MoS2 and WS2 Analogues of Graphene

(2010) H. S. S. Ramakrishna Matte et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Modulation of electronic properties of hexagonal boron nitride bilayers by an electric field: A first principles study

(2010) Zailin Yang et al.   JOURNAL OF APPLIED PHYSICS

Controlling Energy Gap of Bilayer Graphene by Strain

(2010) Seon-Myeong Choi et al.   NANO LETTERS

Probing Strain-Induced Electronic Structure Change in Graphene by Raman Spectroscopy

(2010) Mingyuan Huang et al.   NANO LETTERS

Gap opening in graphene by shear strain

(2010) Giulio Cocco et al.   PHYSICAL REVIEW B

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Electronic structure of two-dimensional crystals fromab initiotheory

(2009) S. Lebègue et al.   PHYSICAL REVIEW B

Uniaxial strain in graphene by Raman spectroscopy:Gpeak splitting, Grüneisen parameters, and sample orientation

(2009) T. M. G. Mohiuddin et al.   PHYSICAL REVIEW B

Subjecting a Graphene Monolayer to Tension and Compression

(2009) Georgia Tsoukleri et al.   Small

Ab initiostudy of bilateral doping within theMoS2-NbS2system

(2008) Viktoria V. Ivanovskaya et al.   PHYSICAL REVIEW B

Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

(2008) C. Lee et al.   SCIENCE