Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides

Integrated Circuits and Logic Operations Based on Single-Layer MoS2

(2011) Branimir Radisavljevic et al.   ACS Nano

Low-temperature photocarrier dynamics in monolayer MoS2

(2011) T. Korn et al.   APPLIED PHYSICS LETTERS

The indirect to direct band gap transition in multilayered MoS2 as predicted by screened hybrid density functional theory

(2011) Jason K. Ellis et al.   APPLIED PHYSICS LETTERS

Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors

(2011) Leitao Liu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

How Good Can Monolayer MoS2Transistors Be?

(2011) Youngki Yoon et al.   NANO LETTERS

Photoluminescence from Chemically Exfoliated MoS2

(2011) Goki Eda et al.   NANO LETTERS

Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of MoS2

(2011) Emilio Scalise et al.   Nano Research

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

First principles study of structural, vibrational and electronic properties of graphene-like MX2 (M=Mo, Nb, W, Ta; X=S, Se, Te) monolayers

(2011) Yi Ding et al.   PHYSICA B-CONDENSED MATTER

Band-gap transition induced by interlayer van der Waals interaction in MoS2

(2011) S. W. Han et al.   PHYSICAL REVIEW B

Comparative study of hybrid functionals applied to structural and electronic properties of semiconductors and insulators

(2011) Yu-ichiro Matsushita et al.   PHYSICAL REVIEW B

Tunable band gaps in bilayer transition-metal dichalcogenides

(2011) Ashwin Ramasubramaniam et al.   PHYSICAL REVIEW B

Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials

(2011) J. N. Coleman et al.   SCIENCE

MoS2 and WS2 Analogues of Graphene

(2010) H. S. S. Ramakrishna Matte et al.   ANGEWANDTE CHEMIE-INTERNATIONAL EDITION

Dopant based electron beam lithography in CuxTiSe2

(2010) T.E. Kidd et al.   APPLIED SURFACE SCIENCE

Graphene Field-Effect Transistors with High On/Off Current Ratio and Large Transport Band Gap at Room Temperature

(2010) Fengnian Xia et al.   NANO LETTERS

Emerging Photoluminescence in Monolayer MoS2

(2010) Andrea Splendiani et al.   NANO LETTERS

Electronic and elastic properties of MoS2

(2010) Li Wei et al.   PHYSICA B-CONDENSED MATTER

Atomically ThinMoS2: A New Direct-Gap Semiconductor

(2010) Kin Fai Mak et al.   PHYSICAL REVIEW LETTERS

Kinetics of the excitonic radiative recombination in WS2:Br2 and MoS2:Cl2 layered crystals

(2009) Andrei Colev et al.   JOURNAL OF LUMINESCENCE

A grid-based Bader analysis algorithm without lattice bias

(2009) W Tang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Direct observation of a widely tunable bandgap in bilayer graphene

(2009) Yuanbo Zhang et al.   NATURE

Electronic structure of two-dimensional crystals fromab initiotheory

(2009) S. Lebègue et al.   PHYSICAL REVIEW B

Uniaxial Strain on Graphene: Raman Spectroscopy Study and Band-Gap Opening

(2008) Zhen Hua Ni et al.   ACS Nano

From Mott state to superconductivity in 1T-TaS2

(2008) B. Sipos et al.   NATURE MATERIALS

Fermi surface nesting in several transition metal dichalcogenides

(2008) D S Inosov et al.   NEW JOURNAL OF PHYSICS