Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration
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Title
Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration
Authors
Keywords
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Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 18, Issue 27, Pages 18584-18589
Publisher
Royal Society of Chemistry (RSC)
Online
2016-06-16
DOI
10.1039/c6cp02405j
References
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Related references
Note: Only part of the references are listed.- Effect of strain relaxation and the Burstein–Moss energy shift on the optical properties of InN films grown in the self-seeded catalytic process
- (2016) Kishore K. Madapu et al. CRYSTENGCOMM
- Growth of InN quantum dots to nanorods: a competition between nucleation and growth rates
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- (2015) Yurui Fang et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Effect of Electric Field Gradient on Sub-nanometer Spatial Resolution of Tip-enhanced Raman Spectroscopy
- (2015) Lingyan Meng et al. Scientific Reports
- Raoult’s Formalism in Understanding Low-Temperature Growth of GaN Nanowires Using Binary Precursor
- (2013) Kishore K. Madapu et al. Journal of Physical Chemistry C
- Morphology of InN nanorods using spectroscopic Raman imaging
- (2013) Kishore K. Madapu et al. JOURNAL OF RAMAN SPECTROSCOPY
- p-Type InN Nanowires
- (2013) S. Zhao et al. NANO LETTERS
- Oxygen mediated synthesis of high quality InN nanowires above their decomposition temperature
- (2013) Ehtesham B. Quddus et al. Nanoscale
- Auger recombination as the dominant nonradiative recombination channel in InN
- (2013) YongJin Cho et al. PHYSICAL REVIEW B
- Plasmonic Gradient Effects on High Vacuum Tip-Enhanced Raman Spectroscopy
- (2013) Mengtao Sun et al. Advanced Optical Materials
- Effects of doping and indium inclusions on the structural and optical properties of InN thin films grown by MOCVD
- (2012) H F Liu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Near-infrared electroluminescence emission from an n-InN nanodots/p-Si heterojunction structure
- (2012) Guoguang Wu et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Raman scattering by wave-vector-dependent coupled plasmon/LO-phonon modes inn-type InN
- (2012) YongJin Cho et al. PHYSICAL REVIEW B
- Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires
- (2012) S. Zhao et al. PHYSICAL REVIEW B
- The determination of the bulk residual doping in indium nitride films using photoluminescence
- (2009) M. Moret et al. APPLIED PHYSICS LETTERS
- When group-III nitrides go infrared: New properties and perspectives
- (2009) Junqiao Wu JOURNAL OF APPLIED PHYSICS
- Selective excitation ofE1(LO)andA1(LO)phonons with large wave vectors in the Raman spectra of hexagonal InN
- (2009) V. Yu. Davydov et al. PHYSICAL REVIEW B
- Raman scattering study of the long-wavelength longitudinal-optical-phonon–plasmon coupled modes in high-mobility InN layers
- (2009) Ramon Cuscó et al. PHYSICAL REVIEW B
- Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements
- (2008) Martin Feneberg et al. PHYSICAL REVIEW B
- Origins of band-gap renormalization in degenerately doped semiconductors
- (2008) Aron Walsh et al. PHYSICAL REVIEW B
- Slowing of carrier cooling in hot carrier solar cells
- (2007) G.J. Conibeer et al. THIN SOLID FILMS
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