Effect of strain relaxation and the Burstein–Moss energy shift on the optical properties of InN films grown in the self-seeded catalytic process

Growth of InN quantum dots to nanorods: a competition between nucleation and growth rates

(2015) Kishore K. Madapu et al.   CRYSTENGCOMM

Auger recombination as the dominant recombination process in indium nitride at low temperatures during steady-state photoluminescence

(2013) I. P. Seetoh et al.   APPLIED PHYSICS LETTERS

Raoult’s Formalism in Understanding Low-Temperature Growth of GaN Nanowires Using Binary Precursor

(2013) Kishore K. Madapu et al.   Journal of Physical Chemistry C

Morphology of InN nanorods using spectroscopic Raman imaging

(2013) Kishore K. Madapu et al.   JOURNAL OF RAMAN SPECTROSCOPY

p-Type InN Nanowires

(2013) S. Zhao et al.   NANO LETTERS

Structural properties of InN films grown on O-face ZnO(0001¯) by plasma-assisted molecular beam epitaxy

(2012) YongJin Cho et al.   APPLIED PHYSICS LETTERS

Raman scattering by wave-vector-dependent coupled plasmon/LO-phonon modes inn-type InN

(2012) YongJin Cho et al.   PHYSICAL REVIEW B

Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

(2012) S. Zhao et al.   PHYSICAL REVIEW B

Influence of high electron concentration on band gap and effective electron mass of InN

(2011) O. Donmez et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

Spatially resolved photoluminescence and Raman mapping of epitaxial GaN laterally overgrown on sapphire

(2010) J.-S. Song et al.   PHYSICAL REVIEW B

Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on a sapphire substrate

(2009) V. P. Kladko et al.   JOURNAL OF APPLIED PHYSICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Low Temperature Growth of In2O3 and InN Nanocrystals on Si(111) via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

(2009) Matthew Zervos et al.   Nanoscale Research Letters

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

(2009) J. Segura-Ruiz et al.   PHYSICAL REVIEW B

Raman scattering study of the long-wavelength longitudinal-optical-phonon–plasmon coupled modes in high-mobility InN layers

(2009) Ramon Cuscó et al.   PHYSICAL REVIEW B

Effect of stress and free-carrier concentration on photoluminescence in InN

(2008) D. Y. Song et al.   APPLIED PHYSICS LETTERS

Origins of band-gap renormalization in degenerately doped semiconductors

(2008) Aron Walsh et al.   PHYSICAL REVIEW B