Understanding the role of Si doping on surface charge and optical properties: Photoluminescence study of intrinsic and Si-doped InN nanowires

Tuning the Surface Charge Properties of Epitaxial InN Nanowires

(2012) S. Zhao et al.   NANO LETTERS

Band gap of InxGa1−xN: A first principles analysis

(2011) Mathieu César et al.   APPLIED PHYSICS LETTERS

Direct measurement of the band gap and Fermi level position at InN(112¯0)

(2011) Ph. Ebert et al.   APPLIED PHYSICS LETTERS

Is electron accumulation universal at InN polar surfaces?

(2011)   APPLIED PHYSICS LETTERS

Doping of III-Nitride Nanowires Grown by Molecular Beam Epitaxy

(2011) Toma Stoica et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Carrier recombination dynamics in Si doped InN thin films

(2011) Antaryami Mohanta et al.   JOURNAL OF APPLIED PHYSICS

Suitability of Au- and Self-Assisted GaAs Nanowires for Optoelectronic Applications

(2011) Steffen Breuer et al.   NANO LETTERS

Properties of uniform diameter InN nanowires obtained under Si doping

(2011) T Gotschke et al.   NANOTECHNOLOGY

Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy

(2011) Anja Eisenhardt et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire

(2010) Yi-Lu Chang et al.   ADVANCED FUNCTIONAL MATERIALS

Surface, bulk, and interface electronic properties of nonpolar InN

(2010) W. M. Linhart et al.   APPLIED PHYSICS LETTERS

In-vacancies in Si-doped InN

(2010) C. Rauch et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Recent advances and challenges for successful p-type control of InN films with Mg acceptor doping by molecular beam epitaxy

(2010) Akihiko Yoshikawa et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Controlling the conductivity of InN

(2010) C. G. Van de Walle et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Inhomogeneous free-electron distribution in InN nanowires: Photoluminescence excitation experiments

(2010) J. Segura-Ruiz et al.   PHYSICAL REVIEW B

InN nanocolumns grown by plasma-assisted molecular beam epitaxy on A-plane GaN templates

(2009) J. Grandal et al.   APPLIED PHYSICS LETTERS

The determination of the bulk residual doping in indium nitride films using photoluminescence

(2009) M. Moret et al.   APPLIED PHYSICS LETTERS

Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

(2009) Thang B. Hoang et al.   APPLIED PHYSICS LETTERS

Influence of phonons on the temperature dependence of photoluminescence in InN with low carrier concentration

(2009) M. E. Holtz et al.   JOURNAL OF APPLIED PHYSICS

When group-III nitrides go infrared: New properties and perspectives

(2009) Junqiao Wu   JOURNAL OF APPLIED PHYSICS

Electrical Conductivity of InN Nanowires and the Influence of the Native Indium Oxide Formed at Their Surface

(2009) Florian Werner et al.   NANO LETTERS

Electrical transport properties of single undoped and n-type doped InN nanowires

(2009) T Richter et al.   NANOTECHNOLOGY

Molecular beam epitaxial growth and characterization of non-tapered InN nanowires on Si(111)

(2009) Yi-Lu Chang et al.   NANOTECHNOLOGY

Direct measurement of dopant distribution in an individual vapour–liquid–solid nanowire

(2009) Daniel E. Perea et al.   Nature Nanotechnology

Optical studies of MBE-grown InN nanocolumns: Evidence of surface electron accumulation

(2009) J. Segura-Ruiz et al.   PHYSICAL REVIEW B

Diameter-dependent dopant location in silicon and germanium nanowires

(2009) P. Xie et al.   PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA

Mahan excitons in degenerate wurtzite InN: Photoluminescence spectroscopy and reflectivity measurements

(2008) Martin Feneberg et al.   PHYSICAL REVIEW B

Absence of Fermi-Level Pinning at Cleaved Nonpolar InN Surfaces

(2008) Chung-Lin Wu et al.   PHYSICAL REVIEW LETTERS