Journal
PHYSICAL REVIEW B
Volume 87, Issue 15, Pages -Publisher
AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.87.155203
Keywords
-
Ask authors/readers for more resources
We investigate the dependence of the photoluminescence intensity of degenerately doped (6 x 10(17) - to 1 x 10(20)-cm(-3)) InN films on their threading dislocation density and background doping level. The photoluminescence intensity is found to be not determined by the structural quality of the film but by its doping density. The inverse relationship between the photoluminescence intensity and the electron density suggests that Auger recombination is the mechanism which actually limits the internal quantum efficiency of these films. DOI: 10.1103/PhysRevB.87.155203
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available