Atomistic simulations of electrochemical metallization cells: mechanisms of ultra-fast resistance switching in nanoscale devices

On the Origin of Steep $I$ –$V$ Nonlinearity in Mixed-Ionic-Electronic-Conduction-Based Access Devices

(2015) Alvaro Padilla et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Stability and migration of small copper clusters in amorphous dielectrics

(2015) David M. Guzman et al.   JOURNAL OF APPLIED PHYSICS

Cu impurity in insulators and in metal-insulator-metal structures: Implications for resistance-switching random access memories

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Voltage equilibration for reactive atomistic simulations of electrochemical processes

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Role of direct electron-phonon coupling across metal-semiconductor interfaces in thermal transport via molecular dynamics

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Ultrafast Chemistry under Nonequilibrium Conditions and the Shock to Deflagration Transition at the Nanoscale

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Training and operation of an integrated neuromorphic network based on metal-oxide memristors

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Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells

(2015) Nicolas Onofrio et al.   NATURE MATERIALS

Nanoscale cation motion in TaOx, HfOx and TiOx memristive systems

(2015) Anja Wedig et al.   Nature Nanotechnology

Mesodynamics with implicit degrees of freedom

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Towards time-dependent, non-equilibrium charge-transfer force fields

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ACKS2: Atom-condensed Kohn-Sham DFT approximated to second order

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Redox reactions with empirical potentials: Atomistic battery discharge simulations

(2013) Wolf B. Dapp et al.   JOURNAL OF CHEMICAL PHYSICS

Cation-based resistance change memory

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Defect level distributions and atomic relaxations induced by charge trapping in amorphous silica

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Simulation of multilevel switching in electrochemical metallization memory cells

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Graphene to fluorographene and fluorographane: a theoretical study

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Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces

(2012) Ilia Valov et al.   NATURE MATERIALS

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Observation of conducting filament growth in nanoscale resistive memories

(2012) Yuchao Yang et al.   Nature Communications

Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches

(2011) Tohru Tsuruoka et al.   ADVANCED FUNCTIONAL MATERIALS

Combustion of an Illinois No. 6 coal char simulated using an atomistic char representation and the ReaxFF reactive force field

(2011) Fidel Castro-Marcano et al.   COMBUSTION AND FLAME

Confined Water Dissociation in Microporous Defective Silicates: Mechanism, Dipole Distribution, and Impact on Substrate Properties

(2011) Hegoi Manzano et al.   JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

Scaling limits of resistive memories

(2011) Victor V Zhirnov et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

First-Principles Investigation of Low EnergyE′Center Precursors in Amorphous Silica

(2011) Nathan L. Anderson et al.   PHYSICAL REVIEW LETTERS

Electrical Energy Storage for the Grid: A Battery of Choices

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Development and Validation of a ReaxFF Reactive Force Field for Cu Cation/Water Interactions and Copper Metal/Metal Oxide/Metal Hydroxide Condensed Phases

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Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2

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Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

‘Memristive’ switches enable ‘stateful’ logic operations via material implication

(2010) Julien Borghetti et al.   NATURE

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS