Excellent surface passivation of p-type TOPCon enabled by ozone-gas oxidation with a single-sided saturation current density of ∼ 4.5 fA/cm2
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Title
Excellent surface passivation of p-type TOPCon enabled by ozone-gas oxidation with a single-sided saturation current density of ∼ 4.5 fA/cm2
Authors
Keywords
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Journal
Solar Energy
Volume 259, Issue -, Pages 348-355
Publisher
Elsevier BV
Online
2023-05-30
DOI
10.1016/j.solener.2023.05.028
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- Comparison of different types of interfacial oxides on hole-selective p+-poly-Si passivated contacts for high-efficiency c-Si solar cells
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- Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W
- (2019) Yifeng Chen et al. PROGRESS IN PHOTOVOLTAICS
- An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells
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- (2018) Jan Schmidt et al. SOLAR ENERGY MATERIALS AND SOLAR CELLS
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- (2018) Andrea Ingenito et al. Nature Energy
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- (2017) David L. Young et al. IEEE Journal of Photovoltaics
- Carrier-selective contacts for Si solar cells
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- Silicon oxidation by ozone
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