Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV

Title
Gallium-Doped Poly-Si:Ga/SiO2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV
Authors
Keywords
-
Journal
IEEE Journal of Photovoltaics
Volume 7, Issue 6, Pages 1640-1645
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2017-09-30
DOI
10.1109/jphotov.2017.2748422

Ask authors/readers for more resources

Publish scientific posters with Peeref

Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.

Learn More

Find the ideal target journal for your manuscript

Explore over 38,000 international journals covering a vast array of academic fields.

Search