An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells

Published 2019 View Full Article

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Title
An industrially viable TOPCon structure with both ultra-thin SiOx and n+-poly-Si processed by PECVD for p-type c-Si solar cells
Authors
Keywords
Passivated contact, Tunnel oxide, Plasma-assisted oxidation, N2O, p-type Si substrate, Carrier selective
Journal
SOLAR ENERGY MATERIALS AND SOLAR CELLS
Volume 200, Issue -, Pages 109926
Publisher
Elsevier BV
Online
2019-05-11
DOI
10.1016/j.solmat.2019.109926

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