Effects of electrode materials on the performance of Zr0.75Hf0.25O2-based ferroelectric thin films via post deposition annealing

Hafnium-doped zirconia ferroelectric thin films with excellent endurance at high polarization

(2022) Yating Cao et al.   Nanoscale

The Influence of Top and Bottom Metal Electrodes on Ferroelectricity of Hafnia

(2021) Yongsun Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices

(2021) Pavan Nukala et al.   SCIENCE

Effect of Film Microstructure on Domain Nucleation and Intrinsic Switching in Ferroelectric Y:HfO 2 Thin Film Capacitors

(2021) Pratyush Buragohain et al.   ADVANCED FUNCTIONAL MATERIALS

Excellent ferroelectric Hf0.5Zr0.5O2 thin films with ultra-thin Al2O3 serving as capping layer

(2021) Bingwen Liu et al.   APPLIED PHYSICS LETTERS

Enhanced ferroelectric polarization with less wake-up effect and improved endurance of Hf0.5Zr0.5O2 thin films by implementing W electrode

(2021) Dao Wang et al.   JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Sub-7-nm textured ZrO2 with giant ferroelectricity

(2020) Kuei-Wen Huang et al.   ACTA MATERIALIA

Post deposition annealing effect on properties of Y2O3/Al2O3 stacking gate dielectric on 4H-SiC

(2019) Feng Zhao et al.   MATERIALS LETTERS

Inhibition of Oxygen Scavenging by TiN at the TiN/SiO2 Interface by Atomic-Layer-Deposited Al2O3 Protective Interlayer

(2019) Elena O. Filatova et al.   Journal of Physical Chemistry C

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Effects of Capping Electrode on Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films

(2018) Rongrong Cao et al.   IEEE ELECTRON DEVICE LETTERS

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

(2018) Thomas Mikolajick et al.   MRS BULLETIN

High Endurance Ferroelectric Hafnium Oxide-Based FeFET Memory Without Retention Penalty

(2018) T. Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Ferroelectric Negative Capacitance Field Effect Transistor

(2018) Luqi Tu et al.   Advanced Electronic Materials

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

(2018) Luqi Tu et al.   Advanced Electronic Materials

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

(2017) Min Hyuk Park et al.   Nanoscale

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

On the structural origins of ferroelectricity in HfO2 thin films

(2015) Xiahan Sang et al.   APPLIED PHYSICS LETTERS

The origin of ferroelectricity in Hf1−xZrxO2: A computational investigation and a surface energy model

(2015) R. Materlik et al.   JOURNAL OF APPLIED PHYSICS

TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films

(2015) Patrick D. Lomenzo et al.   JOURNAL OF APPLIED PHYSICS

Atomic Layer Etching: An Industry Perspective

(2015) C. T. Carver et al.   ECS Journal of Solid State Science and Technology

Impact of different dopants on the switching properties of ferroelectric hafniumoxide

(2014) Uwe Schroeder et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Ferroelectric Random Access Memories

(2012) Hiroshi Ishiwara   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS